Fabrication of tapered graded-refractive-index micropillars using ion-implanted-photoresist as an etch mask

Ming Ma; E. Fred Schubert; Jaehee Cho; Morgan Evans; Gi Bum Kim; Cheolsoo Sone

doi:10.1116/1.4862547

Fabrication of tapered graded-refractive-index micropillars using ion-implanted-photoresist as an etch mask

Ming Ma
, E. Fred Schubert
, Jaehee Cho
, Morgan Evans
, Gi Bum Kim
, Cheolsoo Sone

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Applied Materials Incorporated
Samsung

Research output: Contribution to journal › Journal article › peer-review

Abstract

Thermally reflowed photoresist is used as an etch mask in inductively coupled plasma reactive ion etching of dielectric graded-refractive-index (GRIN) coatings. The coatings have varying compositions of TiO₂ and SiO₂ and are used to fabricate GRIN micropillars with tapered sidewalls. The effects of ion implantation on the dry-etch-resistance of photoresist are investigated for Si, N, and Ar ion implantation. Compared with the unimplanted photoresist, the implanted photoresists show enhanced dry-etch-resistance under fluorine chemistry (CHF₃ and O ₂). The etch rate of the Si-implanted photoresist is 72% lower than that of the unimplanted photoresist. The measured depth of modification of the photoresist is in good agreement with the trend predicted by ion-implantation-simulation software. Using Si-implanted photoresist as an etch mask, five-layer GRIN micropillars with tapered sidewalls are fabricated.

Original language	English
Article number	021305
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	32
Issue number	2
DOIs	https://doi.org/10.1116/1.4862547
State	Published - 2014.03

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1116/1.4862547

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title = "Fabrication of tapered graded-refractive-index micropillars using ion-implanted-photoresist as an etch mask",

abstract = "Thermally reflowed photoresist is used as an etch mask in inductively coupled plasma reactive ion etching of dielectric graded-refractive-index (GRIN) coatings. The coatings have varying compositions of TiO2 and SiO2 and are used to fabricate GRIN micropillars with tapered sidewalls. The effects of ion implantation on the dry-etch-resistance of photoresist are investigated for Si, N, and Ar ion implantation. Compared with the unimplanted photoresist, the implanted photoresists show enhanced dry-etch-resistance under fluorine chemistry (CHF3 and O 2). The etch rate of the Si-implanted photoresist is 72\% lower than that of the unimplanted photoresist. The measured depth of modification of the photoresist is in good agreement with the trend predicted by ion-implantation-simulation software. Using Si-implanted photoresist as an etch mask, five-layer GRIN micropillars with tapered sidewalls are fabricated.",

author = "Ming Ma and \{Fred Schubert\}, E. and Jaehee Cho and Morgan Evans and \{Bum Kim\}, Gi and Cheolsoo Sone",

year = "2014",

month = mar,

doi = "10.1116/1.4862547",

language = "English",

volume = "32",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

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TY - JOUR

T1 - Fabrication of tapered graded-refractive-index micropillars using ion-implanted-photoresist as an etch mask

AU - Ma, Ming

AU - Fred Schubert, E.

AU - Cho, Jaehee

AU - Evans, Morgan

AU - Bum Kim, Gi

AU - Sone, Cheolsoo

PY - 2014/3

Y1 - 2014/3

N2 - Thermally reflowed photoresist is used as an etch mask in inductively coupled plasma reactive ion etching of dielectric graded-refractive-index (GRIN) coatings. The coatings have varying compositions of TiO2 and SiO2 and are used to fabricate GRIN micropillars with tapered sidewalls. The effects of ion implantation on the dry-etch-resistance of photoresist are investigated for Si, N, and Ar ion implantation. Compared with the unimplanted photoresist, the implanted photoresists show enhanced dry-etch-resistance under fluorine chemistry (CHF3 and O 2). The etch rate of the Si-implanted photoresist is 72% lower than that of the unimplanted photoresist. The measured depth of modification of the photoresist is in good agreement with the trend predicted by ion-implantation-simulation software. Using Si-implanted photoresist as an etch mask, five-layer GRIN micropillars with tapered sidewalls are fabricated.

AB - Thermally reflowed photoresist is used as an etch mask in inductively coupled plasma reactive ion etching of dielectric graded-refractive-index (GRIN) coatings. The coatings have varying compositions of TiO2 and SiO2 and are used to fabricate GRIN micropillars with tapered sidewalls. The effects of ion implantation on the dry-etch-resistance of photoresist are investigated for Si, N, and Ar ion implantation. Compared with the unimplanted photoresist, the implanted photoresists show enhanced dry-etch-resistance under fluorine chemistry (CHF3 and O 2). The etch rate of the Si-implanted photoresist is 72% lower than that of the unimplanted photoresist. The measured depth of modification of the photoresist is in good agreement with the trend predicted by ion-implantation-simulation software. Using Si-implanted photoresist as an etch mask, five-layer GRIN micropillars with tapered sidewalls are fabricated.

UR - https://www.scopus.com/pages/publications/84894416937

U2 - 10.1116/1.4862547

DO - 10.1116/1.4862547

M3 - Journal article

AN - SCOPUS:84894416937

SN - 0734-2101

VL - 32

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 2

M1 - 021305

ER -

Fabrication of tapered graded-refractive-index micropillars using ion-implanted-photoresist as an etch mask

Abstract

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