Fermi-level depinning in germanium Schottky junction using nitrogen plasma treatment

V. Janardhanam; H. J. Yun; I. Jyothi; H. K. Lee; S. N. Lee; J. Won; C. J. Choi

doi:10.1049/el.2018.1066

Fermi-level depinning in germanium Schottky junction using nitrogen plasma treatment

V. Janardhanam
, H. J. Yun
, I. Jyothi
, H. K. Lee
, S. N. Lee
, J. Won
, C. J. Choi^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

Fermi-level depinning in germanium (Ge) through nitrogen (N₂) plasma treatment is demonstrated. The Ge surface was exposed to N₂ plasma for 1 min without heat treatment, resulting in the formation of 2.5 nm-thick GeO_xN_y layer with uniform surface and interface morphologies. Ohmic and Schottky behaviours were obtained for Al contacts to N₂ plasma-treated n- and p-type Ge with barrier heights of 0.09 and 0.40 eV, respectively. Fermi-level depinning could be attributed to the reduction in interface states caused by the passivation of Ge surface by highly uniform GeO_xN_y layer.

Original language	English
Pages (from-to)	897-899
Number of pages	3
Journal	Electronics Letters
Volume	54
Issue number	14
DOIs	https://doi.org/10.1049/el.2018.1066
State	Published - 2018.07.12

Quacquarelli Symonds(QS) Subject Topics

Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1049/el.2018.1066

Cite this

@article{fe679a7b3ea34b009acd74ce4e734bc1,

title = "Fermi-level depinning in germanium Schottky junction using nitrogen plasma treatment",

abstract = "Fermi-level depinning in germanium (Ge) through nitrogen (N2) plasma treatment is demonstrated. The Ge surface was exposed to N2 plasma for 1 min without heat treatment, resulting in the formation of 2.5 nm-thick GeOxNy layer with uniform surface and interface morphologies. Ohmic and Schottky behaviours were obtained for Al contacts to N2 plasma-treated n- and p-type Ge with barrier heights of 0.09 and 0.40 eV, respectively. Fermi-level depinning could be attributed to the reduction in interface states caused by the passivation of Ge surface by highly uniform GeOxNy layer.",

author = "V. Janardhanam and Yun, \{H. J.\} and I. Jyothi and Lee, \{H. K.\} and Lee, \{S. N.\} and J. Won and Choi, \{C. J.\}",

note = "Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2018.",

year = "2018",

month = jul,

day = "12",

doi = "10.1049/el.2018.1066",

language = "English",

volume = "54",

pages = "897--899",

journal = "Electronics Letters",

issn = "0013-5194",

number = "14",

}

TY - JOUR

T1 - Fermi-level depinning in germanium Schottky junction using nitrogen plasma treatment

AU - Janardhanam, V.

AU - Yun, H. J.

AU - Jyothi, I.

AU - Lee, H. K.

AU - Lee, S. N.

AU - Won, J.

AU - Choi, C. J.

PY - 2018/7/12

Y1 - 2018/7/12

N2 - Fermi-level depinning in germanium (Ge) through nitrogen (N2) plasma treatment is demonstrated. The Ge surface was exposed to N2 plasma for 1 min without heat treatment, resulting in the formation of 2.5 nm-thick GeOxNy layer with uniform surface and interface morphologies. Ohmic and Schottky behaviours were obtained for Al contacts to N2 plasma-treated n- and p-type Ge with barrier heights of 0.09 and 0.40 eV, respectively. Fermi-level depinning could be attributed to the reduction in interface states caused by the passivation of Ge surface by highly uniform GeOxNy layer.

AB - Fermi-level depinning in germanium (Ge) through nitrogen (N2) plasma treatment is demonstrated. The Ge surface was exposed to N2 plasma for 1 min without heat treatment, resulting in the formation of 2.5 nm-thick GeOxNy layer with uniform surface and interface morphologies. Ohmic and Schottky behaviours were obtained for Al contacts to N2 plasma-treated n- and p-type Ge with barrier heights of 0.09 and 0.40 eV, respectively. Fermi-level depinning could be attributed to the reduction in interface states caused by the passivation of Ge surface by highly uniform GeOxNy layer.

UR - https://www.scopus.com/pages/publications/85049520317

U2 - 10.1049/el.2018.1066

DO - 10.1049/el.2018.1066

M3 - Journal article

AN - SCOPUS:85049520317

SN - 0013-5194

VL - 54

SP - 897

EP - 899

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Fermi-level depinning in germanium Schottky junction using nitrogen plasma treatment

Abstract

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this