@inproceedings{05f8634de9fa418c93b3867430d9dad9,
title = "Ferroelectric Diodes with Sub-ns and Sub-fJ Switching and Its Programmable Network for Logic-in-Memory Applications",
abstract = "In this work, we report hafnium zirconium oxide (HZO)/indium gallium zinc oxide (IGZO)-based programmable ferroelectric (FE) diode memory array with ultra-fast sub-ns switching speed, thus extremely low sub-fJ switching energy for future in-memory and neuromorphic computing applications for the first time. The fabricated devices have electroresistance ratio of 3×105 and show robust cyclic endurance up to 109. In particular, we demonstrated a nonvolatile logic-in-memory circuit to implement NOT gate and incremental conductance changes to mimic analog nature of synaptic weights.",
author = "Hagyoul Bae and Taehwan Moon and Nam, \{Seung Geol\} and Lee, \{Kwang Hee\} and Sangwook Kim and Sangjun Hong and Choe, \{Duk Hyun\} and Sanghyun Jo and Yunseong Lee and Jinseong Heo",
note = "Publisher Copyright: {\textcopyright} 2021 JSAP; 41st Symposium on VLSI Technology, VLSI Technology 2021 ; Conference date: 13-06-2021 Through 19-06-2021",
year = "2021",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 Symposium on VLSI Technology, VLSI Technology 2021",
}