Ferroelectric Polarization Rotation in Order-Disorder-Type LiNbO 3 Thin Films

  • Tae Sup Yoo
  • , Sang A. Lee
  • , Changjae Roh
  • , Seunghun Kang
  • , Daehee Seol
  • , Xinwei Guan
  • , Jong Seong Bae
  • , Jiwoong Kim
  • , Young Min Kim
  • , Hu Young Jeong
  • , Seunggyo Jeong
  • , Ahmed Yousef Mohamed
  • , Deok Yong Cho
  • , Ji Young Jo
  • , Sungkyun Park
  • , Tom Wu
  • , Yunseok Kim
  • , Jongseok Lee
  • , Woo Seok Choi*
  • *Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

Abstract

The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we report the observation of continuous rotation of ferroelectric polarization in order-disorder-type LiNbO 3 thin films. The spontaneous polarization could be tilted from an out-of-plane to an in-plane direction in the thin film by controlling the Li vacancy concentration within the hexagonal lattice framework. Partial inclusion of monoclinic-like phase is attributed to the breaking of macroscopic inversion symmetry along different directions and the emergence of ferroelectric polarization along the in-plane direction.

Original languageEnglish
Pages (from-to)41471-41478
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number48
DOIs
StatePublished - 2018.12.5

Keywords

  • ferroelectric polarization rotation
  • LiNbO thin films
  • second harmonic generation
  • spatial inversion symmetry breaking
  • vacancy engineering

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science

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