Ferromagnetic GaN:MnAlSi nanowires

Congkang Xu; Junghwan Chun; Keehan Rho; Dong Eon Kim; Beom Jim Kim; Seokwon Yoon; Seong Eok Han; Ju Jin Kim

doi:10.1063/1.2174125

Ferromagnetic GaN:MnAlSi nanowires

Congkang Xu
, Junghwan Chun
, Keehan Rho
, Dong Eon Kim^*
, Beom Jim Kim
, Seokwon Yoon
, Seong Eok Han
, Ju Jin Kim

^*Corresponding author for this work

Department of Physics

Pohang University of Science and Technology
Korea Institute of Science and Technology
The Catholic University of Korea
Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

23 Scopus citations

Abstract

The fabrication of crystalline Al-codoped GaN:Mn nanowires with a Mn doping rate of approximately 7 at. % is reported. The magnetism measurements show that the Curie temperature is above 350 K. X-ray and electron diffractions do not show the presence of any secondary magnetic phases. The electrical transport measurement indicates that the nanowires are of n -type semiconductor.

Original language	English
Article number	064312
Journal	Journal of Applied Physics
Volume	99
Issue number	6
DOIs	https://doi.org/10.1063/1.2174125
State	Published - 2006

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.1063/1.2174125

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@article{734db25179cf46059ded12c02b4d18f6,

title = "Ferromagnetic GaN:MnAlSi nanowires",

abstract = "The fabrication of crystalline Al-codoped GaN:Mn nanowires with a Mn doping rate of approximately 7 at. \% is reported. The magnetism measurements show that the Curie temperature is above 350 K. X-ray and electron diffractions do not show the presence of any secondary magnetic phases. The electrical transport measurement indicates that the nanowires are of n -type semiconductor.",

author = "Congkang Xu and Junghwan Chun and Keehan Rho and Kim, \{Dong Eon\} and Kim, \{Beom Jim\} and Seokwon Yoon and Han, \{Seong Eok\} and Kim, \{Ju Jin\}",

year = "2006",

doi = "10.1063/1.2174125",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "6",

}

TY - JOUR

T1 - Ferromagnetic GaN:MnAlSi nanowires

AU - Xu, Congkang

AU - Chun, Junghwan

AU - Rho, Keehan

AU - Kim, Dong Eon

AU - Kim, Beom Jim

AU - Yoon, Seokwon

AU - Han, Seong Eok

AU - Kim, Ju Jin

PY - 2006

Y1 - 2006

N2 - The fabrication of crystalline Al-codoped GaN:Mn nanowires with a Mn doping rate of approximately 7 at. % is reported. The magnetism measurements show that the Curie temperature is above 350 K. X-ray and electron diffractions do not show the presence of any secondary magnetic phases. The electrical transport measurement indicates that the nanowires are of n -type semiconductor.

AB - The fabrication of crystalline Al-codoped GaN:Mn nanowires with a Mn doping rate of approximately 7 at. % is reported. The magnetism measurements show that the Curie temperature is above 350 K. X-ray and electron diffractions do not show the presence of any secondary magnetic phases. The electrical transport measurement indicates that the nanowires are of n -type semiconductor.

UR - https://www.scopus.com/pages/publications/33645775456

U2 - 10.1063/1.2174125

DO - 10.1063/1.2174125

M3 - Journal article

AN - SCOPUS:33645775456

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 064312

ER -

Ferromagnetic GaN:MnAlSi nanowires

Abstract

Quacquarelli Symonds(QS) Subject Topics

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