Field emission from Ni-disilicide nanorods formed by using implantation of Ni in Si coupled with laser annealing

We report on the formation of Ni-disilicide (Ni Si2) nanorods using Ni and Si implantation combined with a laser annealing process. We found that Ni Si2 nanorods are formed when the as-implanted Si samples are laser annealed at the energy density of 700 mJ cm2. Based on the Fowler-Nordheim theory, field emission behavior of the Ni Si2 nanorod samples has been characterized. The turn-on field and a field enhancement factor were measured to be 7.6 Vμm and about 630, respectively. A possible mechanism is given to describe how the Ni Si2 nanorods embedded in crystallized Si are formed during the laser annealing.