Flexible Nanoporous WO3-x Nonvolatile Memory Device

Yongsung Ji; Yang Yang; Seoung Ki Lee; Gedeng Ruan; Tae Wook Kim; Huilong Fei; Seung Hoon Lee; Dong Yu Kim; Jongwon Yoon; James M. Tour

doi:10.1021/acsnano.6b02711

Flexible Nanoporous WO_3-x Nonvolatile Memory Device

Yongsung Ji
, Yang Yang
, Seoung Ki Lee
, Gedeng Ruan
, Tae Wook Kim
, Huilong Fei
, Seung Hoon Lee
, Dong Yu Kim
, Jongwon Yoon
, James M. Tour^*

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Rice University
University of Central Florida
Korea Institute of Science and Technology
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

127 Scopus citations

Abstract

Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO_3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO_3-x RRAM device showed bipolar switching characteristics and a high I_ON/I_OFF ratio of ∼10⁵. The device also showed stable retention time over 5 × 10⁵ s, outstanding cell-to-cell uniformity, and bending endurance over 10³ cycles when measured in both the flat and the maximum bending conditions.

Original language	English
Pages (from-to)	7598-7603
Number of pages	6
Journal	ACS Nano
Volume	10
Issue number	8
DOIs	https://doi.org/10.1021/acsnano.6b02711
State	Published - 2016.08.23

Keywords

flexible memory
nanoporous
resistive random access memory
WO memory

Access to Document

10.1021/acsnano.6b02711

Cite this

@article{ea2e652a4b4645fba5bb004c89d10d9d,

title = "Flexible Nanoporous WO3-x Nonvolatile Memory Device",

abstract = "Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high ION/IOFF ratio of ∼105. The device also showed stable retention time over 5 × 105 s, outstanding cell-to-cell uniformity, and bending endurance over 103 cycles when measured in both the flat and the maximum bending conditions.",

keywords = "flexible memory, nanoporous, resistive random access memory, WO memory",

author = "Yongsung Ji and Yang Yang and Lee, \{Seoung Ki\} and Gedeng Ruan and Kim, \{Tae Wook\} and Huilong Fei and Lee, \{Seung Hoon\} and Kim, \{Dong Yu\} and Jongwon Yoon and Tour, \{James M.\}",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = aug,

day = "23",

doi = "10.1021/acsnano.6b02711",

language = "English",

volume = "10",

pages = "7598--7603",

journal = "ACS Nano",

issn = "1936-0851",

number = "8",

}

TY - JOUR

T1 - Flexible Nanoporous WO3-x Nonvolatile Memory Device

AU - Ji, Yongsung

AU - Yang, Yang

AU - Lee, Seoung Ki

AU - Ruan, Gedeng

AU - Kim, Tae Wook

AU - Fei, Huilong

AU - Lee, Seung Hoon

AU - Kim, Dong Yu

AU - Yoon, Jongwon

AU - Tour, James M.

PY - 2016/8/23

Y1 - 2016/8/23

N2 - Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high ION/IOFF ratio of ∼105. The device also showed stable retention time over 5 × 105 s, outstanding cell-to-cell uniformity, and bending endurance over 103 cycles when measured in both the flat and the maximum bending conditions.

AB - Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high ION/IOFF ratio of ∼105. The device also showed stable retention time over 5 × 105 s, outstanding cell-to-cell uniformity, and bending endurance over 103 cycles when measured in both the flat and the maximum bending conditions.

KW - flexible memory

KW - nanoporous

KW - resistive random access memory

KW - WO memory

UR - https://www.scopus.com/pages/publications/84983399558

U2 - 10.1021/acsnano.6b02711

DO - 10.1021/acsnano.6b02711

M3 - Journal article

AN - SCOPUS:84983399558

SN - 1936-0851

VL - 10

SP - 7598

EP - 7603

JO - ACS Nano

JF - ACS Nano

IS - 8

ER -

Flexible Nanoporous WO_3-x Nonvolatile Memory Device

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this