Flexoelectric control of defect formation in ferroelectric epitaxial thin films

Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO₃ thin films. An intriguing, so far never demonstrated, effect of internal electric field (E _int) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function.