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Flexoelectric effect in the reversal of self-polarization and associated changes in the electronic functional properties of bifeo3 thin films

  • Byung Chul Jeon
  • , Daesu Lee
  • , Myang Hwan Lee
  • , Sang Mo Yang
  • , Seung Chul Chae
  • , Tae Kwon Song
  • , Sang Don Bu*
  • , Jin Seok Chung
  • , Jong Gul Yoon
  • , Tae Won Noh
  • *Corresponding author for this work
  • Korea Basic Science Institute
  • Seoul National University
  • Changwon National University
  • Soongsil University
  • Suwon University

Research output: Contribution to journalJournal articlepeer-review

Abstract

Flexoelectricity can play an important role in the reversal of the self-polarization direction in epitaxial BiFeO3 thin films. The flexoelectric and interfacial effects compete with each other to determine the self-polarization state. In Region I, the self-polarization is downward because the interfacial effect is more dominant than the flexoelectric effect. In Region II, the self-polarization is upward, because the flexoelectric effect becomes more dominant than the interfacial effect.

Original languageEnglish
Pages (from-to)5643-5649
Number of pages7
JournalAdvanced Materials
Volume25
Issue number39
DOIs
StatePublished - 2013.10.18

Keywords

  • BiFeO film
  • flexoelectric effect
  • self-polarization
  • strain gradient

Quacquarelli Symonds(QS) Subject Topics

  • Engineering - Mechanical
  • Materials Science

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