Formation mechanism of CdTe self-assembled quantum dots embedded into ZnTe barriers

M. S. Jang; S. H. Oh; H. S. Lee; J. C. Choi; H. L. Park; T. W. Kim; D. C. Choo; D. U. Lee

doi:10.1063/1.1477280

Formation mechanism of CdTe self-assembled quantum dots embedded into ZnTe barriers

M. S. Jang
, S. H. Oh
, H. S. Lee
, J. C. Choi
, H. L. Park
, T. W. Kim
, D. C. Choo
, D. U. Lee

Department of Physics

Yonsei University
Kwangwoon University

Research output: Contribution to journal › Journal article › peer-review

23 Scopus citations

Abstract

Photoluminescence spectra showed that the formation mechanism for CdTe layers grown on ZnTe thin films changed from a two-dimensional mode to a three-dimensional mode with increasing submonolayer CdTe layer thickness, and the temperature-dependent PL spectra indicated that the activation energy of CdTe quantum dots is larger than that of CdTe single quantum wells. The formation mechanism for the CdTe QDs is in reasonable agreement with a Stranski-Krastanov growth mode.

Original language	English
Pages (from-to)	993-995
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	6
DOIs	https://doi.org/10.1063/1.1477280
State	Published - 2002.08.5

Access to Document

10.1063/1.1477280

Cite this

@article{1195208a571d4f69bec0f4568cebbbed,

title = "Formation mechanism of CdTe self-assembled quantum dots embedded into ZnTe barriers",

abstract = "Photoluminescence spectra showed that the formation mechanism for CdTe layers grown on ZnTe thin films changed from a two-dimensional mode to a three-dimensional mode with increasing submonolayer CdTe layer thickness, and the temperature-dependent PL spectra indicated that the activation energy of CdTe quantum dots is larger than that of CdTe single quantum wells. The formation mechanism for the CdTe QDs is in reasonable agreement with a Stranski-Krastanov growth mode.",

author = "Jang, \{M. S.\} and Oh, \{S. H.\} and Lee, \{H. S.\} and Choi, \{J. C.\} and Park, \{H. L.\} and Kim, \{T. W.\} and Choo, \{D. C.\} and Lee, \{D. U.\}",

year = "2002",

month = aug,

day = "5",

doi = "10.1063/1.1477280",

language = "English",

volume = "81",

pages = "993--995",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "6",

}

TY - JOUR

T1 - Formation mechanism of CdTe self-assembled quantum dots embedded into ZnTe barriers

AU - Jang, M. S.

AU - Oh, S. H.

AU - Lee, H. S.

AU - Choi, J. C.

AU - Park, H. L.

AU - Kim, T. W.

AU - Choo, D. C.

AU - Lee, D. U.

PY - 2002/8/5

Y1 - 2002/8/5

N2 - Photoluminescence spectra showed that the formation mechanism for CdTe layers grown on ZnTe thin films changed from a two-dimensional mode to a three-dimensional mode with increasing submonolayer CdTe layer thickness, and the temperature-dependent PL spectra indicated that the activation energy of CdTe quantum dots is larger than that of CdTe single quantum wells. The formation mechanism for the CdTe QDs is in reasonable agreement with a Stranski-Krastanov growth mode.

AB - Photoluminescence spectra showed that the formation mechanism for CdTe layers grown on ZnTe thin films changed from a two-dimensional mode to a three-dimensional mode with increasing submonolayer CdTe layer thickness, and the temperature-dependent PL spectra indicated that the activation energy of CdTe quantum dots is larger than that of CdTe single quantum wells. The formation mechanism for the CdTe QDs is in reasonable agreement with a Stranski-Krastanov growth mode.

UR - https://www.scopus.com/pages/publications/79956011807

U2 - 10.1063/1.1477280

DO - 10.1063/1.1477280

M3 - Journal article

AN - SCOPUS:79956011807

SN - 0003-6951

VL - 81

SP - 993

EP - 995

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Formation mechanism of CdTe self-assembled quantum dots embedded into ZnTe barriers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this