Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

June O. Song; Kyung Kook Kim; Hyunsoo Kim; Yong Hyun Kim; Hyun Gi Hong; Hyeonseok Na; Tae Yeon Seong

doi:10.1016/j.mssp.2007.12.001

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

June O. Song
, Kyung Kook Kim
, Hyunsoo Kim
, Yong Hyun Kim
, Hyun Gi Hong
, Hyeonseok Na
, Tae Yeon Seong^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

National Institute for Materials Science Tsukuba
Samsung
Korea University

Research output: Contribution to journal › Journal article › peer-review

14 Scopus citations

Abstract

We report on the formation of low-resistance and highly transparent indium tin oxide (ITO) ohmic contacts to p-GaN using a Sn-Ag alloy interlayer. Although the as-deposited Sn-Ag(6 nm)/ITO(200 nm) contacts show non-ohmic behaviors, the scheme becomes ohmic with specific contact resistance of 4.72×10^-4 Ω cm² and produce transmittance of ∼91% at wavelength of 460 nm when annealed at 530 °C. Blue light-emitting diodes (LEDs) fabricated with the Sn-Ag/ITO contacts give forward-bias voltage of 3.31 V at injection current of 20 mA. LEDs with the Sn-Ag/ITO contacts show the improvement of the output power by 62% (at 20 mA) compared with LEDs with Ni/Au contacts.

Original language	English
Pages (from-to)	211-214
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	10
Issue number	4-5
DOIs	https://doi.org/10.1016/j.mssp.2007.12.001
State	Published - 2007.08

Keywords

Ag-Sn alloy
GaN
Indium tin oxide
Light-emitting diode
Ohmic contact

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10.1016/j.mssp.2007.12.001

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@article{36cc357ea4304823aa3f9ac159e02ee5,

title = "Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer",

abstract = "We report on the formation of low-resistance and highly transparent indium tin oxide (ITO) ohmic contacts to p-GaN using a Sn-Ag alloy interlayer. Although the as-deposited Sn-Ag(6 nm)/ITO(200 nm) contacts show non-ohmic behaviors, the scheme becomes ohmic with specific contact resistance of 4.72×10-4 Ω cm2 and produce transmittance of ∼91\% at wavelength of 460 nm when annealed at 530 °C. Blue light-emitting diodes (LEDs) fabricated with the Sn-Ag/ITO contacts give forward-bias voltage of 3.31 V at injection current of 20 mA. LEDs with the Sn-Ag/ITO contacts show the improvement of the output power by 62\% (at 20 mA) compared with LEDs with Ni/Au contacts.",

keywords = "Ag-Sn alloy, GaN, Indium tin oxide, Light-emitting diode, Ohmic contact",

author = "Song, \{June O.\} and Kim, \{Kyung Kook\} and Hyunsoo Kim and Kim, \{Yong Hyun\} and Hong, \{Hyun Gi\} and Hyeonseok Na and Seong, \{Tae Yeon\}",

year = "2007",

month = aug,

doi = "10.1016/j.mssp.2007.12.001",

language = "English",

volume = "10",

pages = "211--214",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

number = "4-5",

}

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer. / Song, June O.; Kim, Kyung Kook; Kim, Hyunsoo et al.
In: Materials Science in Semiconductor Processing, Vol. 10, No. 4-5, 08.2007, p. 211-214.

Research output: Contribution to journal › Journal article › peer-review

TY - JOUR

T1 - Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

AU - Song, June O.

AU - Kim, Kyung Kook

AU - Kim, Hyunsoo

AU - Kim, Yong Hyun

AU - Hong, Hyun Gi

AU - Na, Hyeonseok

AU - Seong, Tae Yeon

PY - 2007/8

Y1 - 2007/8

N2 - We report on the formation of low-resistance and highly transparent indium tin oxide (ITO) ohmic contacts to p-GaN using a Sn-Ag alloy interlayer. Although the as-deposited Sn-Ag(6 nm)/ITO(200 nm) contacts show non-ohmic behaviors, the scheme becomes ohmic with specific contact resistance of 4.72×10-4 Ω cm2 and produce transmittance of ∼91% at wavelength of 460 nm when annealed at 530 °C. Blue light-emitting diodes (LEDs) fabricated with the Sn-Ag/ITO contacts give forward-bias voltage of 3.31 V at injection current of 20 mA. LEDs with the Sn-Ag/ITO contacts show the improvement of the output power by 62% (at 20 mA) compared with LEDs with Ni/Au contacts.

AB - We report on the formation of low-resistance and highly transparent indium tin oxide (ITO) ohmic contacts to p-GaN using a Sn-Ag alloy interlayer. Although the as-deposited Sn-Ag(6 nm)/ITO(200 nm) contacts show non-ohmic behaviors, the scheme becomes ohmic with specific contact resistance of 4.72×10-4 Ω cm2 and produce transmittance of ∼91% at wavelength of 460 nm when annealed at 530 °C. Blue light-emitting diodes (LEDs) fabricated with the Sn-Ag/ITO contacts give forward-bias voltage of 3.31 V at injection current of 20 mA. LEDs with the Sn-Ag/ITO contacts show the improvement of the output power by 62% (at 20 mA) compared with LEDs with Ni/Au contacts.

KW - Ag-Sn alloy

KW - GaN

KW - Indium tin oxide

KW - Light-emitting diode

KW - Ohmic contact

UR - https://www.scopus.com/pages/publications/40849133832

U2 - 10.1016/j.mssp.2007.12.001

DO - 10.1016/j.mssp.2007.12.001

M3 - Journal article

AN - SCOPUS:40849133832

SN - 1369-8001

VL - 10

SP - 211

EP - 214

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 4-5

ER -

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

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Keywords

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