Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method

Seonghoon Jeong; Sung Nam Lee; Hyunsoo Kim

doi:10.3938/jkps.72.90

Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method

Seonghoon Jeong
, Sung Nam Lee
, Hyunsoo Kim^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University
Tech University of Korea

Research output: Contribution to journal › Journal article › peer-review

Abstract

The electrical breakdown (EBD) method was used to obtain Ohmic contact to semipolar (11-20) p-GaN surfaces using the Ti/SiO₂/p-GaN structure. The EBD method by which the electrical stress voltage was increased up to 70 V with a compliance current of 30 mA resulted in an Ohmic contact with a specific contact resistance of 3.1×10⁻³ Ωcm². The transmission electron microscope (TEM) analysis revealed that the oxygen was slightly out-diffused from SiO₂ layer toward Ti surface and the oxidation occurred at the Ti surface, while the GaN remained unchanged.

Original language	English
Pages (from-to)	90-94
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	72
Issue number	1
DOIs	https://doi.org/10.3938/jkps.72.90
State	Published - 2018.01.1

Keywords

Electrical breakdown method
Ohmic contact
Semipolar p-GaN

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.3938/jkps.72.90

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title = "Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method",

abstract = "The electrical breakdown (EBD) method was used to obtain Ohmic contact to semipolar (11-20) p-GaN surfaces using the Ti/SiO2/p-GaN structure. The EBD method by which the electrical stress voltage was increased up to 70 V with a compliance current of 30 mA resulted in an Ohmic contact with a specific contact resistance of 3.1×10−3 Ωcm2. The transmission electron microscope (TEM) analysis revealed that the oxygen was slightly out-diffused from SiO2 layer toward Ti surface and the oxidation occurred at the Ti surface, while the GaN remained unchanged.",

keywords = "Electrical breakdown method, Ohmic contact, Semipolar p-GaN",

author = "Seonghoon Jeong and Lee, \{Sung Nam\} and Hyunsoo Kim",

note = "Publisher Copyright: {\textcopyright} 2018, The Korean Physical Society.",

year = "2018",

month = jan,

day = "1",

doi = "10.3938/jkps.72.90",

language = "English",

volume = "72",

pages = "90--94",

journal = "Journal of the Korean Physical Society",

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TY - JOUR

T1 - Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method

AU - Jeong, Seonghoon

AU - Lee, Sung Nam

AU - Kim, Hyunsoo

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The electrical breakdown (EBD) method was used to obtain Ohmic contact to semipolar (11-20) p-GaN surfaces using the Ti/SiO2/p-GaN structure. The EBD method by which the electrical stress voltage was increased up to 70 V with a compliance current of 30 mA resulted in an Ohmic contact with a specific contact resistance of 3.1×10−3 Ωcm2. The transmission electron microscope (TEM) analysis revealed that the oxygen was slightly out-diffused from SiO2 layer toward Ti surface and the oxidation occurred at the Ti surface, while the GaN remained unchanged.

AB - The electrical breakdown (EBD) method was used to obtain Ohmic contact to semipolar (11-20) p-GaN surfaces using the Ti/SiO2/p-GaN structure. The EBD method by which the electrical stress voltage was increased up to 70 V with a compliance current of 30 mA resulted in an Ohmic contact with a specific contact resistance of 3.1×10−3 Ωcm2. The transmission electron microscope (TEM) analysis revealed that the oxygen was slightly out-diffused from SiO2 layer toward Ti surface and the oxidation occurred at the Ti surface, while the GaN remained unchanged.

KW - Electrical breakdown method

KW - Ohmic contact

KW - Semipolar p-GaN

UR - https://www.scopus.com/pages/publications/85040086468

U2 - 10.3938/jkps.72.90

DO - 10.3938/jkps.72.90

M3 - Journal article

AN - SCOPUS:85040086468

SN - 0374-4884

VL - 72

SP - 90

EP - 94

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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