Abstract
In this study, the effects of forward and reverse current aging on the reliability characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag-based reflective electrodes were investigated. The LEDs showed a noticeable degradation in output after forward current (100 mA) or reverse current (−0.1 mA) aging for 24 h. This could be due to the significantly increased leakage currents caused by disruptions of Ni/Ag/Pt reflective electrodes via Ag migration after forward current aging (causing surface leakage), or via electrode destruction near the V-defect region after reverse current aging (causing bulk leakage). Notably, this degradation behavior could be explained in terms of current crowding.
| Original language | English |
|---|---|
| Pages (from-to) | 72-77 |
| Number of pages | 6 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 90 |
| DOIs | |
| State | Published - 2019.02 |
Keywords
- Ag migration
- Current crowding
- Light emitting diode
- Reliability
- Reverse current aging
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Engineering - Mechanical
- Physics & Astronomy
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