Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

Annamraju Kasi Viswanath; Joo In Lee; C. R. Lee; J. Y. Leem; Dongho Kim

doi:10.1016/s0038-1098(98)00378-0

Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

Annamraju Kasi Viswanath^*
, Joo In Lee
, C. R. Lee
, J. Y. Leem
, Dongho Kim

^*Corresponding author for this work

Information Materials Engineering

Korea Research Institute of Standards and Science

Research output: Contribution to journal › Journal article › peer-review

12 Scopus citations

Abstract

We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

Original language	English
Pages (from-to)	483-487
Number of pages	5
Journal	Solid State Communications
Volume	108
Issue number	7
DOIs	https://doi.org/10.1016/s0038-1098(98)00378-0
State	Published - 1998.10.16

Keywords

A. semiconductors
D. optical properties
D. recombination and trapping

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10.1016/s0038-1098(98)00378-0

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@article{fb0befd8769c476e84a1a40e7cc237a5,

title = "Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD",

abstract = "We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.",

keywords = "A. semiconductors, D. optical properties, D. recombination and trapping",

author = "Viswanath, \{Annamraju Kasi\} and Lee, \{Joo In\} and Lee, \{C. R.\} and Leem, \{J. Y.\} and Dongho Kim",

year = "1998",

month = oct,

day = "16",

doi = "10.1016/s0038-1098(98)00378-0",

language = "English",

volume = "108",

pages = "483--487",

journal = "Solid State Communications",

issn = "0038-1098",

number = "7",

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TY - JOUR

T1 - Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

AU - Viswanath, Annamraju Kasi

AU - Lee, Joo In

AU - Lee, C. R.

AU - Leem, J. Y.

AU - Kim, Dongho

PY - 1998/10/16

Y1 - 1998/10/16

N2 - We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

AB - We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

KW - A. semiconductors

KW - D. optical properties

KW - D. recombination and trapping

UR - https://www.scopus.com/pages/publications/0032182526

U2 - 10.1016/s0038-1098(98)00378-0

DO - 10.1016/s0038-1098(98)00378-0

M3 - Journal article

AN - SCOPUS:0032182526

SN - 0038-1098

VL - 108

SP - 483

EP - 487

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

Abstract

Keywords

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