Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride

Nae Man Park; Tae Soo Kim; Chel Jong Choi; Tae Yeon Seong; Seong Ju Park

Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride

Nae Man Park^*
, Tae Soo Kim
, Chel Jong Choi
, Tae Yeon Seong
, Seong Ju Park

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2×10^-3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

Original language	English
Pages (from-to)	F1361-F1366
Journal	Materials Research Society Symposium - Proceedings
Volume	638
State	Published - 2001
Event	Microcrystalline and Nanocrystalline Semiconductors 2000 - Boston, MA, United States Duration: 2000.11.27 → 2000.11.30

Cite this

@article{5ac19bff64ec452d8e9fd8814013fed3,

title = "Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride",

abstract = "Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2×10-3 \% was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.",

author = "Park, \{Nae Man\} and Kim, \{Tae Soo\} and Choi, \{Chel Jong\} and Seong, \{Tae Yeon\} and Park, \{Seong Ju\}",

year = "2001",

language = "English",

volume = "638",

pages = "F1361--F1366",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Microcrystalline and Nanocrystalline Semiconductors 2000 ; Conference date: 27-11-2000 Through 30-11-2000",

}

TY - JOUR

T1 - Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride

AU - Park, Nae Man

AU - Kim, Tae Soo

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

AU - Park, Seong Ju

PY - 2001

Y1 - 2001

N2 - Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2×10-3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

AB - Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2×10-3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

UR - https://www.scopus.com/pages/publications/0035557478

M3 - Conference article

AN - SCOPUS:0035557478

SN - 0272-9172

VL - 638

SP - F1361-F1366

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Microcrystalline and Nanocrystalline Semiconductors 2000

Y2 - 27 November 2000 through 30 November 2000

ER -

Full color luminescence from amorphous silicon quantum dots embedded in silicon nitride

Abstract

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