Fully current-based sub-bandgap optoelectronic differential ideality factor technique and extraction of subgap DOS in amorphous semiconductor TFTs

Hagyoul Bae; Hyojoon Seo; Sungwoo Jun; Hyunjun Choi; Jaeyeop Ahn; Junseok Hwang; Jungmin Lee; Saeroonter Oh; Jong Uk Bae; Sung Jin Choi; Dae Hwan Kim; Dong Myong Kim

doi:10.1109/TED.2014.2348592

Fully current-based sub-bandgap optoelectronic differential ideality factor technique and extraction of subgap DOS in amorphous semiconductor TFTs

Hagyoul Bae^*
, Hyojoon Seo
, Sungwoo Jun
, Hyunjun Choi
, Jaeyeop Ahn
, Junseok Hwang
, Jungmin Lee
, Saeroonter Oh
, Jong Uk Bae
, Sung Jin Choi
, Dae Hwan Kim
, Dong Myong Kim

^*Corresponding author for this work

Division of Electronic Engineering

Kookmin University
Korea Advanced Institute of Science and Technology
LG Corporation

Research output: Contribution to journal › Journal article › peer-review

27 Scopus citations

Abstract

A sub-bandgap optoelectronic differential ideality factor technique is proposed for extraction of the intrinsic density-of-states (DOS) over the bandgap in amorphous semiconductor thin-film transistors (TFTs). In the proposed technique, the gate bias-dependent differential change in the difference of ideality factors ((d Δ η (V_GS)/dV_GS) between dark and sub-bandgap photonic excitation condition is employed. With the sub-bandgap photons (hν < E_g), the photonic excitation of electrons is confined only from the localized DOS over the bandgap. We applied the proposed technique to a-InGaZnO TFTs with W/L = 50/25 μm/μm and extracted the energy distribution of the intrinsic DOS for the localized states over the bandgap.

Original language	English
Article number	6891249
Pages (from-to)	3566-3569
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	10
DOIs	https://doi.org/10.1109/TED.2014.2348592
State	Published - 2014.10.1

Keywords

Amorphous oxide semiconductor
density-of-states (DOS)
differential ideality factor
InGaZnO (IGZO)
optoelectronic
subgap thin-film transistor (TFT)
subthreshold
TFT

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10.1109/TED.2014.2348592

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Bae, H., Seo, H., Jun, S., Choi, H., Ahn, J., Hwang, J., Lee, J., Oh, S., Bae, J. U., Choi, S. J., Kim, D. H., & Kim, D. M. (2014). Fully current-based sub-bandgap optoelectronic differential ideality factor technique and extraction of subgap DOS in amorphous semiconductor TFTs. IEEE Transactions on Electron Devices, 61(10), 3566-3569. Article 6891249. https://doi.org/10.1109/TED.2014.2348592

@article{6f9afe852da2447ca41d75c200428143,

title = "Fully current-based sub-bandgap optoelectronic differential ideality factor technique and extraction of subgap DOS in amorphous semiconductor TFTs",

abstract = "A sub-bandgap optoelectronic differential ideality factor technique is proposed for extraction of the intrinsic density-of-states (DOS) over the bandgap in amorphous semiconductor thin-film transistors (TFTs). In the proposed technique, the gate bias-dependent differential change in the difference of ideality factors ((d Δ η (VGS)/dVGS) between dark and sub-bandgap photonic excitation condition is employed. With the sub-bandgap photons (hν < Eg), the photonic excitation of electrons is confined only from the localized DOS over the bandgap. We applied the proposed technique to a-InGaZnO TFTs with W/L = 50/25 μm/μm and extracted the energy distribution of the intrinsic DOS for the localized states over the bandgap.",

keywords = "Amorphous oxide semiconductor, density-of-states (DOS), differential ideality factor, InGaZnO (IGZO), optoelectronic, subgap thin-film transistor (TFT), subthreshold, TFT",

author = "Hagyoul Bae and Hyojoon Seo and Sungwoo Jun and Hyunjun Choi and Jaeyeop Ahn and Junseok Hwang and Jungmin Lee and Saeroonter Oh and Bae, \{Jong Uk\} and Choi, \{Sung Jin\} and Kim, \{Dae Hwan\} and Kim, \{Dong Myong\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2014",

month = oct,

day = "1",

doi = "10.1109/TED.2014.2348592",

language = "English",

volume = "61",

pages = "3566--3569",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

number = "10",

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Bae, H, Seo, H, Jun, S, Choi, H, Ahn, J, Hwang, J, Lee, J, Oh, S, Bae, JU, Choi, SJ, Kim, DH & Kim, DM 2014, 'Fully current-based sub-bandgap optoelectronic differential ideality factor technique and extraction of subgap DOS in amorphous semiconductor TFTs', IEEE Transactions on Electron Devices, vol. 61, no. 10, 6891249, pp. 3566-3569. https://doi.org/10.1109/TED.2014.2348592

TY - JOUR

T1 - Fully current-based sub-bandgap optoelectronic differential ideality factor technique and extraction of subgap DOS in amorphous semiconductor TFTs

AU - Bae, Hagyoul

AU - Seo, Hyojoon

AU - Jun, Sungwoo

AU - Choi, Hyunjun

AU - Ahn, Jaeyeop

AU - Hwang, Junseok

AU - Lee, Jungmin

AU - Oh, Saeroonter

AU - Bae, Jong Uk

AU - Choi, Sung Jin

AU - Kim, Dae Hwan

AU - Kim, Dong Myong

PY - 2014/10/1

Y1 - 2014/10/1

N2 - A sub-bandgap optoelectronic differential ideality factor technique is proposed for extraction of the intrinsic density-of-states (DOS) over the bandgap in amorphous semiconductor thin-film transistors (TFTs). In the proposed technique, the gate bias-dependent differential change in the difference of ideality factors ((d Δ η (VGS)/dVGS) between dark and sub-bandgap photonic excitation condition is employed. With the sub-bandgap photons (hν < Eg), the photonic excitation of electrons is confined only from the localized DOS over the bandgap. We applied the proposed technique to a-InGaZnO TFTs with W/L = 50/25 μm/μm and extracted the energy distribution of the intrinsic DOS for the localized states over the bandgap.

AB - A sub-bandgap optoelectronic differential ideality factor technique is proposed for extraction of the intrinsic density-of-states (DOS) over the bandgap in amorphous semiconductor thin-film transistors (TFTs). In the proposed technique, the gate bias-dependent differential change in the difference of ideality factors ((d Δ η (VGS)/dVGS) between dark and sub-bandgap photonic excitation condition is employed. With the sub-bandgap photons (hν < Eg), the photonic excitation of electrons is confined only from the localized DOS over the bandgap. We applied the proposed technique to a-InGaZnO TFTs with W/L = 50/25 μm/μm and extracted the energy distribution of the intrinsic DOS for the localized states over the bandgap.

KW - Amorphous oxide semiconductor

KW - density-of-states (DOS)

KW - differential ideality factor

KW - InGaZnO (IGZO)

KW - optoelectronic

KW - subgap thin-film transistor (TFT)

KW - subthreshold

KW - TFT

UR - https://www.scopus.com/pages/publications/84907459038

U2 - 10.1109/TED.2014.2348592

DO - 10.1109/TED.2014.2348592

M3 - Journal article

AN - SCOPUS:84907459038

SN - 0018-9383

VL - 61

SP - 3566

EP - 3569

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

M1 - 6891249

ER -

Fully current-based sub-bandgap optoelectronic differential ideality factor technique and extraction of subgap DOS in amorphous semiconductor TFTs

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