GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer

Jong Kyu Kim; Thomas Gessmann; E. Fred Schubert; J. Q. Xi; Hong Luo; Jaehee Cho; Cheolsoo Sone; Yongjo Park

doi:10.1063/1.2159097

GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer

Jong Kyu Kim^*
, Thomas Gessmann
, E. Fred Schubert
, J. Q. Xi
, Hong Luo
, Jaehee Cho
, Cheolsoo Sone
, Yongjo Park

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Samsung

Research output: Contribution to journal › Journal article › peer-review

149 Scopus citations

Abstract

Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by oblique-angle electron-beam deposition. The refractive index of the nanorod ITO layer is 1.34 at 461 nm, significantly lower than that of dense ITO layer, which is n=2.06. The GaInN LEDs with GaN/low-n ITO/Ag ODR show a lower forward voltage and a 31.6% higher light-extraction efficiency than LEDs with Ag reflector. This is attributed to enhanced reflectivity of the ODR that employs the low-n ITO layer.

Original language	English
Article number	013501
Journal	Applied Physics Letters
Volume	88
Issue number	1
DOIs	https://doi.org/10.1063/1.2159097
State	Published - 2006

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title = "GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer",

abstract = "Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by oblique-angle electron-beam deposition. The refractive index of the nanorod ITO layer is 1.34 at 461 nm, significantly lower than that of dense ITO layer, which is n=2.06. The GaInN LEDs with GaN/low-n ITO/Ag ODR show a lower forward voltage and a 31.6\% higher light-extraction efficiency than LEDs with Ag reflector. This is attributed to enhanced reflectivity of the ODR that employs the low-n ITO layer.",

author = "Kim, \{Jong Kyu\} and Thomas Gessmann and Schubert, \{E. Fred\} and Xi, \{J. Q.\} and Hong Luo and Jaehee Cho and Cheolsoo Sone and Yongjo Park",

year = "2006",

doi = "10.1063/1.2159097",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

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T1 - GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer

AU - Kim, Jong Kyu

AU - Gessmann, Thomas

AU - Schubert, E. Fred

AU - Xi, J. Q.

AU - Luo, Hong

AU - Cho, Jaehee

AU - Sone, Cheolsoo

AU - Park, Yongjo

PY - 2006

Y1 - 2006

N2 - Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by oblique-angle electron-beam deposition. The refractive index of the nanorod ITO layer is 1.34 at 461 nm, significantly lower than that of dense ITO layer, which is n=2.06. The GaInN LEDs with GaN/low-n ITO/Ag ODR show a lower forward voltage and a 31.6% higher light-extraction efficiency than LEDs with Ag reflector. This is attributed to enhanced reflectivity of the ODR that employs the low-n ITO layer.

AB - Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by oblique-angle electron-beam deposition. The refractive index of the nanorod ITO layer is 1.34 at 461 nm, significantly lower than that of dense ITO layer, which is n=2.06. The GaInN LEDs with GaN/low-n ITO/Ag ODR show a lower forward voltage and a 31.6% higher light-extraction efficiency than LEDs with Ag reflector. This is attributed to enhanced reflectivity of the ODR that employs the low-n ITO layer.

UR - https://www.scopus.com/pages/publications/33645533436

U2 - 10.1063/1.2159097

DO - 10.1063/1.2159097

M3 - Journal article

AN - SCOPUS:33645533436

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 013501

ER -

GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer

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