GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

Jaehee Cho

GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

Jaehee Cho

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Applied Physics Letters
State	Published - 2013.11.13

Cite this

@article{6f39f52f3ac44330840f59a82d7fff52,

title = "GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection",

author = "Jaehee Cho",

year = "2013",

month = nov,

day = "13",

language = "Korean",

journal = "Applied Physics Letters",

issn = "0003-6951",

}