@inproceedings{6a0990788b6547b3bf7c8755d2773d35,
title = "GaN-based light emitting diodes with embedded Al 2O 3 powder in indium-tin-oxide",
abstract = "The Al 2O 3 powder was embedded in indium tin oxide (ITO) using natural lithography for high efficiency GaN-based light-emitting diodes (LEDs). The 300-nm-size Al 2O 3 powder is coated on the first step thin ITO surface and the second step ITO was deposited by electron beam evaporator. The total ITO thickness was 250 nm which the first step and second step ITO thickness was 100 nm, 150 nm, respectively. The morphologies of the ITO surface were observed using a scanning electron microscope. The light output powers of the GaN-based LED with the embedded Al 2O 3 powder in the ITO was enhanced by ∼20\% compared with the conventional LED at 20 mA.",
keywords = "Al O powder, GaN, ITO",
author = "Kim, \{S. H.\} and Kim, \{T. K.\} and Sun, \{W. Y.\} and Shim, \{K. H.\} and Lim, \{K. Y.\} and Yang, \{G. M.\}",
year = "2011",
doi = "10.1063/1.3666272",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "93--94",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}