GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

Seong Ran Jeon; Chang Sok Oh; Jeon Wook Yang; Gye Mo Yang; Byueng Su Yoo

doi:10.1063/1.1459487

GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

Seong Ran Jeon^*
, Chang Sok Oh
, Jeon Wook Yang
, Gye Mo Yang
, Byueng Su Yoo

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University
Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

30 Scopus citations

Abstract

We have demonstrated surface-emitting GaN-based diodes with a buried tunnel junction (TJ) current aperture. The current confinement aperture for lateral injection current was defined by mesa etch of a TJ structure and regrowth of current blocking layer surrounding the TJ mesa. Lateral electron current drives a tunnel contact junction providing hole injection into the active region. The very uniform light emission just through a buried TJ aperture represents that the buried TJ structure acts very effectively as a confinement aperture of lateral current injection, particularly in GaN-based vertical-cavity surface-emitting lasers.

Original language	English
Pages (from-to)	1933-1935
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	11
DOIs	https://doi.org/10.1063/1.1459487
State	Published - 2002.03.18

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.1063/1.1459487

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@article{d029f2812e1c4e249f1afea3129a19fd,

title = "GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode",

abstract = "We have demonstrated surface-emitting GaN-based diodes with a buried tunnel junction (TJ) current aperture. The current confinement aperture for lateral injection current was defined by mesa etch of a TJ structure and regrowth of current blocking layer surrounding the TJ mesa. Lateral electron current drives a tunnel contact junction providing hole injection into the active region. The very uniform light emission just through a buried TJ aperture represents that the buried TJ structure acts very effectively as a confinement aperture of lateral current injection, particularly in GaN-based vertical-cavity surface-emitting lasers.",

author = "Jeon, \{Seong Ran\} and Oh, \{Chang Sok\} and Yang, \{Jeon Wook\} and Yang, \{Gye Mo\} and Yoo, \{Byueng Su\}",

year = "2002",

month = mar,

day = "18",

doi = "10.1063/1.1459487",

language = "English",

volume = "80",

pages = "1933--1935",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

AU - Jeon, Seong Ran

AU - Oh, Chang Sok

AU - Yang, Jeon Wook

AU - Yang, Gye Mo

AU - Yoo, Byueng Su

PY - 2002/3/18

Y1 - 2002/3/18

N2 - We have demonstrated surface-emitting GaN-based diodes with a buried tunnel junction (TJ) current aperture. The current confinement aperture for lateral injection current was defined by mesa etch of a TJ structure and regrowth of current blocking layer surrounding the TJ mesa. Lateral electron current drives a tunnel contact junction providing hole injection into the active region. The very uniform light emission just through a buried TJ aperture represents that the buried TJ structure acts very effectively as a confinement aperture of lateral current injection, particularly in GaN-based vertical-cavity surface-emitting lasers.

AB - We have demonstrated surface-emitting GaN-based diodes with a buried tunnel junction (TJ) current aperture. The current confinement aperture for lateral injection current was defined by mesa etch of a TJ structure and regrowth of current blocking layer surrounding the TJ mesa. Lateral electron current drives a tunnel contact junction providing hole injection into the active region. The very uniform light emission just through a buried TJ aperture represents that the buried TJ structure acts very effectively as a confinement aperture of lateral current injection, particularly in GaN-based vertical-cavity surface-emitting lasers.

UR - https://www.scopus.com/pages/publications/79955987353

U2 - 10.1063/1.1459487

DO - 10.1063/1.1459487

M3 - Journal article

AN - SCOPUS:79955987353

SN - 0003-6951

VL - 80

SP - 1933

EP - 1935

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

Abstract

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