GaN/AlGaN SCH UV semiconductor lasers: effect of GaN well thickness on lasing efficiency

G. H. Gainer; Y. H. Kwon; J. B. Lam; A. Kalashyan; J. J. Song; S. C. Choi; G. M. Yang

doi:10.1109/cleo.2000.906694

GaN/AlGaN SCH UV semiconductor lasers: effect of GaN well thickness on lasing efficiency

G. H. Gainer^*
, Y. H. Kwon
, J. B. Lam
, A. Kalashyan
, J. J. Song
, S. C. Choi
, G. M. Yang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Oklahoma State University

Research output: Conference(x) › Paper › peer-review

Abstract

The effect of the GaN well thickness on GaN/AlGaN SCH stimulated emission (SE) efficiency is examined. Reduced SE thresholds with decreasing thickness are observed. This observation suggests that GaN/AlGaN-based ultraviolet (UV) laser diodes fabricated with narrower wells would have better performance.

Original language	English
Pages	35-36
Number of pages	2
DOIs	https://doi.org/10.1109/cleo.2000.906694
State	Published - 2000
Event	Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA Duration: 2000.05.7 → 2000.05.12

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO 2000)
City	San Francisco, CA, USA
Period	00.05.7 → 00.05.12

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10.1109/cleo.2000.906694

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@conference{36457ba7b3c54e71a897c1502fd53856,

title = "GaN/AlGaN SCH UV semiconductor lasers: effect of GaN well thickness on lasing efficiency",

abstract = "The effect of the GaN well thickness on GaN/AlGaN SCH stimulated emission (SE) efficiency is examined. Reduced SE thresholds with decreasing thickness are observed. This observation suggests that GaN/AlGaN-based ultraviolet (UV) laser diodes fabricated with narrower wells would have better performance.",

author = "Gainer, \{G. H.\} and Kwon, \{Y. H.\} and Lam, \{J. B.\} and A. Kalashyan and Song, \{J. J.\} and Choi, \{S. C.\} and Yang, \{G. M.\}",

year = "2000",

doi = "10.1109/cleo.2000.906694",

language = "English",

pages = "35--36",

note = "Conference on Lasers and Electro-Optics (CLEO 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

}

TY - CONF

T1 - GaN/AlGaN SCH UV semiconductor lasers

T2 - Conference on Lasers and Electro-Optics (CLEO 2000)

AU - Gainer, G. H.

AU - Kwon, Y. H.

AU - Lam, J. B.

AU - Kalashyan, A.

AU - Song, J. J.

AU - Choi, S. C.

AU - Yang, G. M.

PY - 2000

Y1 - 2000

N2 - The effect of the GaN well thickness on GaN/AlGaN SCH stimulated emission (SE) efficiency is examined. Reduced SE thresholds with decreasing thickness are observed. This observation suggests that GaN/AlGaN-based ultraviolet (UV) laser diodes fabricated with narrower wells would have better performance.

AB - The effect of the GaN well thickness on GaN/AlGaN SCH stimulated emission (SE) efficiency is examined. Reduced SE thresholds with decreasing thickness are observed. This observation suggests that GaN/AlGaN-based ultraviolet (UV) laser diodes fabricated with narrower wells would have better performance.

UR - https://www.scopus.com/pages/publications/0034547158

U2 - 10.1109/cleo.2000.906694

DO - 10.1109/cleo.2000.906694

M3 - Paper

AN - SCOPUS:0034547158

SP - 35

EP - 36

Y2 - 7 May 2000 through 12 May 2000

ER -

GaN/AlGaN SCH UV semiconductor lasers: effect of GaN well thickness on lasing efficiency

Abstract

Conference

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