Gaussian distribution on electrical properties of identically fabricated Au/n-GaN Schottky junctions with a Nd2O3 interfacial layer

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Materials Science in Semiconductor Processing
State	Published - 2025.09.1

Cite this

@article{100c41ba7318422380e8cfdc5f6e1656,

title = "Gaussian distribution on electrical properties of identically fabricated Au/n-GaN Schottky junctions with a Nd2O3 interfacial layer  ",

author = "Chel-Jong Choi",

year = "2025",

month = sep,

day = "1",

language = "Korean",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}