@inproceedings{d618000021814cf2a423f566ffb2c05e,
title = "Ge1-xSnx/Ge heterostructure infrared photodetector",
abstract = "We report the optoelectronic characterization of Ge2-xSnx/Ge heteroj unction infrared (IR) photodetectors fabrication on Si substrate using rapid thermal chemical vapor deposition (RTCVD) with Ge2H6 and SnCl4 precursors and in a CMOS compatible process. We obtained that Sn contents in Ge1-xSnx. Epitaxial layer ∼5.9\%. The surface roughness root mean square (RMS) were 1.2 nm. The leakage current of a device as low as 0.7 μ? at 1 V and leakage current reduced as device size decrease. At 1550 nm wavelength, the responsivity of the Ge1-xSnx/Ge devices was estimated to be 54 mA/W was measured for a bias of 2 V, without an optimal antireflection coating. Fabricated device shows practicability for optoelectronic applications in the extended IR wavelength regime.",
keywords = "GeSn, heterostructure, infrared, photodetector, RTCVD",
author = "Khurelbaatar Zagarzusem and Kil, \{Yeon Ho\} and Yuk, \{Sim Hoon\} and Kim, \{Taek Sung\} and Zumuukhorol Munkhsaihan and Choi, \{Chel Jong\} and Shim, \{Kyu Hwan\}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 14th IEEE SENSORS ; Conference date: 01-11-2015 Through 04-11-2015",
year = "2015",
month = dec,
day = "31",
doi = "10.1109/ICSENS.2015.7370598",
language = "English",
series = "2015 IEEE SENSORS - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE SENSORS - Proceedings",
}