Giant piezoelectricity on Si for hyperactive MEMS

S. H. Baek; J. Park; D. M. Kim; V. A. Aksyuk; R. R. Das; S. D. Bu; D. A. Felker; J. Lettieri; V. Vaithyanathan; S. S.N. Bharadwaja; N. Bassiri-Gharb; Y. B. Chen; H. P. Sun; C. M. Folkman; H. W. Jang; D. J. Kreft; S. K. Streiffer; R. Ramesh; X. Q. Pan; S. Trolier-McKinstry; D. G. Schlom; M. S. Rzchowski; R. H. Blick; C. B. Eom

doi:10.1126/science.1207186

Giant piezoelectricity on Si for hyperactive MEMS

S. H. Baek
, J. Park
, D. M. Kim
, V. A. Aksyuk
, R. R. Das
, S. D. Bu
, D. A. Felker
, J. Lettieri
, V. Vaithyanathan
, S. S.N. Bharadwaja
, N. Bassiri-Gharb
, Y. B. Chen
, H. P. Sun
, C. M. Folkman
, H. W. Jang
, D. J. Kreft
, S. K. Streiffer
, R. Ramesh
, X. Q. Pan
, S. Trolier-McKinstry

D. G. Schlom, M. S. Rzchowski, R. H. Blick, C. B. Eom^*

^*Corresponding author for this work

Department of Physics

University of Wisconsin-Madison
National Institute of Standards and Technology
Pennsylvania State University
University of Michigan, Ann Arbor
Argonne National Laboratory
University of California at Berkeley
Cornell University

Research output: Contribution to journal › Journal article › peer-review

458 Scopus citations

Abstract

Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg _1/3Nb_2/3)O₃-PbTiO₃ (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO₃ template layer with superior piezoelectric coefficients (e_31,f = -27 ± 3 coulombs per square meter) and figures of merit for piezoelectric energy-harvesting systems. We have incorporated these heterostructures into microcantilevers that are actuated with extremely low drive voltage due to thin-film piezoelectric properties that rival bulk PMN-PT single crystals. These epitaxial heterostructures exhibit very large electromechanical coupling for ultrasound medical imaging, microfluidic control, mechanical sensing, and energy harvesting.

Original language	English
Pages (from-to)	958-961
Number of pages	4
Journal	Science
Volume	334
Issue number	6058
DOIs	https://doi.org/10.1126/science.1207186
State	Published - 2011.11.18

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Baek, S. H., Park, J., Kim, D. M., Aksyuk, V. A., Das, R. R., Bu, S. D., Felker, D. A., Lettieri, J., Vaithyanathan, V., Bharadwaja, S. S. N., Bassiri-Gharb, N., Chen, Y. B., Sun, H. P., Folkman, C. M., Jang, H. W., Kreft, D. J., Streiffer, S. K., Ramesh, R., Pan, X. Q., ... Eom, C. B. (2011). Giant piezoelectricity on Si for hyperactive MEMS. Science, 334(6058), 958-961. https://doi.org/10.1126/science.1207186

@article{cddfb9d081514bfcbf5396f1f282231f,

title = "Giant piezoelectricity on Si for hyperactive MEMS",

abstract = "Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg 1/3Nb2/3)O3-PbTiO3 (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO3 template layer with superior piezoelectric coefficients (e31,f = -27 ± 3 coulombs per square meter) and figures of merit for piezoelectric energy-harvesting systems. We have incorporated these heterostructures into microcantilevers that are actuated with extremely low drive voltage due to thin-film piezoelectric properties that rival bulk PMN-PT single crystals. These epitaxial heterostructures exhibit very large electromechanical coupling for ultrasound medical imaging, microfluidic control, mechanical sensing, and energy harvesting.",

author = "Baek, \{S. H.\} and J. Park and Kim, \{D. M.\} and Aksyuk, \{V. A.\} and Das, \{R. R.\} and Bu, \{S. D.\} and Felker, \{D. A.\} and J. Lettieri and V. Vaithyanathan and Bharadwaja, \{S. S.N.\} and N. Bassiri-Gharb and Chen, \{Y. B.\} and Sun, \{H. P.\} and Folkman, \{C. M.\} and Jang, \{H. W.\} and Kreft, \{D. J.\} and Streiffer, \{S. K.\} and R. Ramesh and Pan, \{X. Q.\} and S. Trolier-McKinstry and Schlom, \{D. G.\} and Rzchowski, \{M. S.\} and Blick, \{R. H.\} and Eom, \{C. B.\}",

year = "2011",

month = nov,

day = "18",

doi = "10.1126/science.1207186",

language = "English",

volume = "334",

pages = "958--961",

journal = "Science",

issn = "0036-8075",

number = "6058",

}

Baek, SH, Park, J, Kim, DM, Aksyuk, VA, Das, RR, Bu, SD, Felker, DA, Lettieri, J, Vaithyanathan, V, Bharadwaja, SSN, Bassiri-Gharb, N, Chen, YB, Sun, HP, Folkman, CM, Jang, HW, Kreft, DJ, Streiffer, SK, Ramesh, R, Pan, XQ, Trolier-McKinstry, S, Schlom, DG, Rzchowski, MS, Blick, RH & Eom, CB 2011, 'Giant piezoelectricity on Si for hyperactive MEMS', Science, vol. 334, no. 6058, pp. 958-961. https://doi.org/10.1126/science.1207186

TY - JOUR

T1 - Giant piezoelectricity on Si for hyperactive MEMS

AU - Baek, S. H.

AU - Park, J.

AU - Kim, D. M.

AU - Aksyuk, V. A.

AU - Das, R. R.

AU - Bu, S. D.

AU - Felker, D. A.

AU - Lettieri, J.

AU - Vaithyanathan, V.

AU - Bharadwaja, S. S.N.

AU - Bassiri-Gharb, N.

AU - Chen, Y. B.

AU - Sun, H. P.

AU - Folkman, C. M.

AU - Jang, H. W.

AU - Kreft, D. J.

AU - Streiffer, S. K.

AU - Ramesh, R.

AU - Pan, X. Q.

AU - Trolier-McKinstry, S.

AU - Schlom, D. G.

AU - Rzchowski, M. S.

AU - Blick, R. H.

AU - Eom, C. B.

PY - 2011/11/18

Y1 - 2011/11/18

N2 - Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg 1/3Nb2/3)O3-PbTiO3 (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO3 template layer with superior piezoelectric coefficients (e31,f = -27 ± 3 coulombs per square meter) and figures of merit for piezoelectric energy-harvesting systems. We have incorporated these heterostructures into microcantilevers that are actuated with extremely low drive voltage due to thin-film piezoelectric properties that rival bulk PMN-PT single crystals. These epitaxial heterostructures exhibit very large electromechanical coupling for ultrasound medical imaging, microfluidic control, mechanical sensing, and energy harvesting.

AB - Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg 1/3Nb2/3)O3-PbTiO3 (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO3 template layer with superior piezoelectric coefficients (e31,f = -27 ± 3 coulombs per square meter) and figures of merit for piezoelectric energy-harvesting systems. We have incorporated these heterostructures into microcantilevers that are actuated with extremely low drive voltage due to thin-film piezoelectric properties that rival bulk PMN-PT single crystals. These epitaxial heterostructures exhibit very large electromechanical coupling for ultrasound medical imaging, microfluidic control, mechanical sensing, and energy harvesting.

UR - https://www.scopus.com/pages/publications/81555212275

U2 - 10.1126/science.1207186

DO - 10.1126/science.1207186

M3 - Journal article

AN - SCOPUS:81555212275

SN - 0036-8075

VL - 334

SP - 958

EP - 961

JO - Science

JF - Science

IS - 6058

ER -

Giant piezoelectricity on Si for hyperactive MEMS

Abstract

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