Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

Tae Wook Kim; Yan Gao; Orb Acton; Hin Lap Yip; Hong Ma; Hongzheng Chen; Alex K.Y. Jen

doi:10.1063/1.3464292

Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

Tae Wook Kim^*
, Yan Gao
, Orb Acton
, Hin Lap Yip
, Hong Ma
, Hongzheng Chen
, Alex K.Y. Jen

^*Corresponding author for this work

Department of Flexible and Printable Electronics

University of Washington
Zhejiang University

Research output: Contribution to journal › Journal article › peer-review

97 Scopus citations

Abstract

Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (ION / IOFF =∼ 10²) for 10 ⁴ s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs.

Original language	English
Article number	023310
Journal	Applied Physics Letters
Volume	97
Issue number	2
DOIs	https://doi.org/10.1063/1.3464292
State	Published - 2010.07.12

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title = "Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications",

abstract = "Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (ION / IOFF =∼ 102) for 10 4 s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs.",

author = "Kim, \{Tae Wook\} and Yan Gao and Orb Acton and Yip, \{Hin Lap\} and Hong Ma and Hongzheng Chen and Jen, \{Alex K.Y.\}",

year = "2010",

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doi = "10.1063/1.3464292",

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T1 - Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

AU - Kim, Tae Wook

AU - Gao, Yan

AU - Acton, Orb

AU - Yip, Hin Lap

AU - Ma, Hong

AU - Chen, Hongzheng

AU - Jen, Alex K.Y.

PY - 2010/7/12

Y1 - 2010/7/12

N2 - Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (ION / IOFF =∼ 102) for 10 4 s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs.

AB - Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (ION / IOFF =∼ 102) for 10 4 s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs.

UR - https://www.scopus.com/pages/publications/77955152124

U2 - 10.1063/1.3464292

DO - 10.1063/1.3464292

M3 - Journal article

AN - SCOPUS:77955152124

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023310

ER -

Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

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