@inproceedings{a3eb677cc82c4c2d9badcf0c00f3e64f,
title = "Graphene/Ge schottky junction based IR photodetectors",
abstract = "Ge p-i-n photodetectors with and without graphene on active area were fabricated and investigated the graphene effects on opto-electrical properties of the photodetectors. The photodetectors were characterized with respect to their dark, photocurrents and responsivities in the wavelength range between 1530-1630 nm. For a 250 um-diameter device at room temperature, it was found that the dark current of the p-i-n photodetector with graphene was reduced significantly compared to the photodetector without graphene. This improvement is attributed to the passivation of the graphene layers, which leads to efficient light detection. Therefore, it is noted that the uniform coverage of graphene onto the Ge surface plays a significant role in advancing their optoelectrical performance of a photodetector.",
keywords = "Germanium, Graphene, Heterojunction, P-i-n photodetector",
author = "Zagarzusem Khurelbaatar and Choi, \{Chel Jong\}",
note = "Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland.; 6th International Conference on Materials Science, ICMS 2017 ; Conference date: 18-08-2017 Through 21-08-2017",
year = "2018",
doi = "10.4028/www.scientific.net/SSP.271.133",
language = "English",
isbn = "9783035712537",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "133--137",
editor = "Jav Davaasambuu and Jadambaa Temuujin",
booktitle = "Advanced Research in Materials Science",
}