Growth and characteristics of InGan MQWs on GaN microstructures by selective MOCVD

We have studied the formation of GaN hexagonal microstructures as a function of growth parameters such as growth pressures, growth temperatures and fill factors and fabricated blue InGaN multiquantum well(MQW) structures on these GaN microstructures by selective metal-organic chemical vapor deposition(MOCVD) with dot-patterned mask. The shapes of these GaN microstructures were strongly related to the formation of the self-limited (0001) facet with various growth conditions, which affect the Ga-diffusion length. In case of InGaN MQWs structures grown on the GaN hexagonal microstructures, blue emission was obtained from six (1-101) facets as well as the flat (0001) facet, while yellow luminescence was strongly observed at lateral overgrown region through the six (1-101) side walls.