Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy

K. H. Shim; S. E. Hong; K. H. Kim; M. C. Paek; K. I. Cho

doi:10.1557/proc-572-383

Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy

K. H. Shim^*
, S. E. Hong
, K. H. Kim
, M. C. Paek
, K. I. Cho

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Conference article › peer-review

Abstract

Structural and optical properties of In_0.2Ga_0.8N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy have been investigated as a function of rf plasma power. Indium incorporation resulted in the higher rf power level suppressing 3D island growth with reduced introduction of defects in In_0.2Ga_0.8N in comparison with GaN. Sharp morphology at interfaces and strong transitions in photoluminescence reveal the optimum rf power around 400 W in our experimental set up for the growth of In_0.2Ga_0.8N/GaN heterostructures. Our experimental observations suggest that the presence of indium on surface modulates the rate of plasma stimulated desorption and diffusion, and reduces the formation of damaged subsurface.

Original language	English
Pages (from-to)	383-388
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	572
DOIs	https://doi.org/10.1557/proc-572-383
State	Published - 1999
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA Duration: 1999.04.5 → 1999.04.8

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@article{6f76373036354d17a1fd6ada1dcbac3e,

title = "Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy",

abstract = "Structural and optical properties of In0.2Ga0.8N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy have been investigated as a function of rf plasma power. Indium incorporation resulted in the higher rf power level suppressing 3D island growth with reduced introduction of defects in In0.2Ga0.8N in comparison with GaN. Sharp morphology at interfaces and strong transitions in photoluminescence reveal the optimum rf power around 400 W in our experimental set up for the growth of In0.2Ga0.8N/GaN heterostructures. Our experimental observations suggest that the presence of indium on surface modulates the rate of plasma stimulated desorption and diffusion, and reduces the formation of damaged subsurface.",

author = "Shim, \{K. H.\} and Hong, \{S. E.\} and Kim, \{K. H.\} and Paek, \{M. C.\} and Cho, \{K. I.\}",

year = "1999",

doi = "10.1557/proc-572-383",

language = "English",

volume = "572",

pages = "383--388",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' ; Conference date: 05-04-1999 Through 08-04-1999",

}

TY - JOUR

T1 - Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy

AU - Shim, K. H.

AU - Hong, S. E.

AU - Kim, K. H.

AU - Paek, M. C.

AU - Cho, K. I.

PY - 1999

Y1 - 1999

N2 - Structural and optical properties of In0.2Ga0.8N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy have been investigated as a function of rf plasma power. Indium incorporation resulted in the higher rf power level suppressing 3D island growth with reduced introduction of defects in In0.2Ga0.8N in comparison with GaN. Sharp morphology at interfaces and strong transitions in photoluminescence reveal the optimum rf power around 400 W in our experimental set up for the growth of In0.2Ga0.8N/GaN heterostructures. Our experimental observations suggest that the presence of indium on surface modulates the rate of plasma stimulated desorption and diffusion, and reduces the formation of damaged subsurface.

AB - Structural and optical properties of In0.2Ga0.8N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy have been investigated as a function of rf plasma power. Indium incorporation resulted in the higher rf power level suppressing 3D island growth with reduced introduction of defects in In0.2Ga0.8N in comparison with GaN. Sharp morphology at interfaces and strong transitions in photoluminescence reveal the optimum rf power around 400 W in our experimental set up for the growth of In0.2Ga0.8N/GaN heterostructures. Our experimental observations suggest that the presence of indium on surface modulates the rate of plasma stimulated desorption and diffusion, and reduces the formation of damaged subsurface.

UR - https://www.scopus.com/pages/publications/0033345565

U2 - 10.1557/proc-572-383

DO - 10.1557/proc-572-383

M3 - Conference article

AN - SCOPUS:0033345565

SN - 0272-9172

VL - 572

SP - 383

EP - 388

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'

Y2 - 5 April 1999 through 8 April 1999

ER -

Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy

Abstract

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