Growth and fabrication of InxGa1-xN/GaN multiple quantum well and blue light emitting diodes

K. S. Kim; C. S. Oh; K. J. Lee; J. H. Kim; Y. S. Kim; G. M. Yang; C. H. Hong; K. Y. Lim; H. J. Lee

doi:10.1109/CLEOPR.1999.817920

Growth and fabrication of In_xGa_1-xN/GaN multiple quantum well and blue light emitting diodes

K. S. Kim
, C. S. Oh
, K. J. Lee
, J. H. Kim
, Y. S. Kim
, G. M. Yang
, C. H. Hong
, K. Y. Lim
, H. J. Lee

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to conference › Conference paper › peer-review

Abstract

The In_xGa_1-xN alloy materials have been used as active layer materials of InGaN based blue and green light emitting diodes (LEDs) [l] and laser diodes (LDs) [2] because they cover a wide band-gap ranging from 1.9 to 3.4 eV . Especially, InGaN/GaN quantum well (QW) is center of interest on account of their huge applications in high brightness LED, cw blue LD, and optoelectronic devices. However, due to the high vapor pressure of indium and low decomposition rate of ammonia, InGaN layers with high indium composition is still difficult to achieve using metalorganic chemical vapor deposition (MOCVD).

Original language	English
Title of host publication	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	959-960
Number of pages	2
ISBN (Electronic)	0780356616, 9780780356610
DOIs	https://doi.org/10.1109/CLEOPR.1999.817920
State	Published - 1999
Event	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 - Seoul, Korea, Republic of Duration: 1999.08.30 → 1999.09.3

Publication series

Name	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Volume	3

Conference

Conference	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Country/Territory	Korea, Republic of
City	Seoul
Period	99.08.30 → 99.09.3

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Computer Science & Information Systems
Physics & Astronomy

Access to Document

10.1109/CLEOPR.1999.817920

Cite this

Kim, K. S., Oh, C. S., Lee, K. J., Kim, J. H., Kim, Y. S., Yang, G. M., Hong, C. H., Lim, K. Y., & Lee, H. J. (1999). Growth and fabrication of In_xGa_1-xN/GaN multiple quantum well and blue light emitting diodes. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics (pp. 959-960). Article 817920 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.1999.817920

@inproceedings{27e33e0295ab4f8aa788f3f81d9a1112,

title = "Growth and fabrication of InxGa1-xN/GaN multiple quantum well and blue light emitting diodes",

abstract = "The InxGa1-xN alloy materials have been used as active layer materials of InGaN based blue and green light emitting diodes (LEDs) [l] and laser diodes (LDs) [2] because they cover a wide band-gap ranging from 1.9 to 3.4 eV . Especially, InGaN/GaN quantum well (QW) is center of interest on account of their huge applications in high brightness LED, cw blue LD, and optoelectronic devices. However, due to the high vapor pressure of indium and low decomposition rate of ammonia, InGaN layers with high indium composition is still difficult to achieve using metalorganic chemical vapor deposition (MOCVD).",

author = "Kim, \{K. S.\} and Oh, \{C. S.\} and Lee, \{K. J.\} and Kim, \{J. H.\} and Kim, \{Y. S.\} and Yang, \{G. M.\} and Hong, \{C. H.\} and Lim, \{K. Y.\} and Lee, \{H. J.\}",

note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 ; Conference date: 30-08-1999 Through 03-09-1999",

year = "1999",

doi = "10.1109/CLEOPR.1999.817920",

language = "English",

series = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "959--960",

booktitle = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",

}

Kim, KS, Oh, CS, Lee, KJ, Kim, JH, Kim, YS, Yang, GM, Hong, CH, Lim, KY & Lee, HJ 1999, Growth and fabrication of In_xGa_1-xN/GaN multiple quantum well and blue light emitting diodes. in CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics., 817920, CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics, vol. 3, Institute of Electrical and Electronics Engineers Inc., pp. 959-960, 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999, Seoul, Korea, Republic of, 99.08.30. https://doi.org/10.1109/CLEOPR.1999.817920

Growth and fabrication of In_xGa_1-xN/GaN multiple quantum well and blue light emitting diodes. / Kim, K. S.; Oh, C. S.; Lee, K. J. et al.
CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc., 1999. p. 959-960 817920 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 3).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Growth and fabrication of InxGa1-xN/GaN multiple quantum well and blue light emitting diodes

AU - Kim, K. S.

AU - Oh, C. S.

AU - Lee, K. J.

AU - Kim, J. H.

AU - Kim, Y. S.

AU - Yang, G. M.

AU - Hong, C. H.

AU - Lim, K. Y.

AU - Lee, H. J.

PY - 1999

Y1 - 1999

N2 - The InxGa1-xN alloy materials have been used as active layer materials of InGaN based blue and green light emitting diodes (LEDs) [l] and laser diodes (LDs) [2] because they cover a wide band-gap ranging from 1.9 to 3.4 eV . Especially, InGaN/GaN quantum well (QW) is center of interest on account of their huge applications in high brightness LED, cw blue LD, and optoelectronic devices. However, due to the high vapor pressure of indium and low decomposition rate of ammonia, InGaN layers with high indium composition is still difficult to achieve using metalorganic chemical vapor deposition (MOCVD).

AB - The InxGa1-xN alloy materials have been used as active layer materials of InGaN based blue and green light emitting diodes (LEDs) [l] and laser diodes (LDs) [2] because they cover a wide band-gap ranging from 1.9 to 3.4 eV . Especially, InGaN/GaN quantum well (QW) is center of interest on account of their huge applications in high brightness LED, cw blue LD, and optoelectronic devices. However, due to the high vapor pressure of indium and low decomposition rate of ammonia, InGaN layers with high indium composition is still difficult to achieve using metalorganic chemical vapor deposition (MOCVD).

UR - https://www.scopus.com/pages/publications/0033315513

U2 - 10.1109/CLEOPR.1999.817920

DO - 10.1109/CLEOPR.1999.817920

M3 - Conference paper

AN - SCOPUS:0033315513

T3 - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

SP - 959

EP - 960

BT - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999

Y2 - 30 August 1999 through 3 September 1999

ER -

Kim KS, Oh CS, Lee KJ, Kim JH, Kim YS, Yang GM et al. Growth and fabrication of In_xGa_1-xN/GaN multiple quantum well and blue light emitting diodes. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc. 1999. p. 959-960. 817920. (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics). doi: 10.1109/CLEOPR.1999.817920