| Original language | Korean |
|---|---|
| Journal | Materials Science in Semiconductor Processing |
| State | Published - 2014.05.1 |
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Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition
- Sukill Kang
- , Kyu-Hwan Shim
Research output: Contribution to journal › Journal article › peer-review