@inproceedings{de076f4f1971463486f86f2d7e9fd0b7,
title = "Growth of GaN nano-column on Si (111) substrate using Au+Ga alloy seeding by pulsed flow method using MOCVD",
abstract = "Vertical GaN nano-columns arrays were grown on Au-coated silicon (111) substrate by Au+Ga alloy seeding method and pulsed flow of Gallium and ammonia using metalorganic chemical vapor deposition (MOCVD). A gold thin film was deposited on Si using an ion coating system. The Au coated Si substrate was annealed at 800°C under hydrogen ambient for 5 min. The pre-deposition of gallium and nitrogen was performed for 60 sec to form Au+Ga and nitrogen solid solution, which acts as the initial nucleation islands. Then Gallium and ammonia were let in pulse method. Scanning electron microscopy (SEM) image reveals a vertical growth and cylindrical in shape GaN nano-column. From the sharp PL peak intensity it is clearly seen that the dislocation density is reduced considerably and the optical quality of the nano-column is improved.",
keywords = "Au coating, GaN, MOCVD, Nanocolumn, Pulse flow, Silicon substrate",
author = "Song, \{Jae Chul\} and Kang, \{Dong Hun\} and Lee, \{Seon Ho\} and Jang, \{Eun Su\} and Kim, \{Dong Wook\} and Santhakumar Kannappan and Lee, \{Cheul Ro\}",
year = "2008",
doi = "10.4028/0-87849-471-5.108",
language = "English",
isbn = "0878494715",
series = "Advanced Materials Research",
publisher = "Trans Tech Publications",
pages = "108--110",
booktitle = "Semiconductor Photonics",
note = "International Conference on Materials for Advanced Technologies, ICMAT 2007 ; Conference date: 01-07-2007 Through 06-07-2007",
}