Growth of height-controlled InGaN quantum dots on GaN

Il Kyu Park; Seong Ju Park; Chel Jong Choi

doi:10.1016/j.jcrysgro.2010.04.025

Growth of height-controlled InGaN quantum dots on GaN

Il Kyu Park
, Seong Ju Park^*
, Chel Jong Choi

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Yeungnam University
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

InGaN height-controlled quantum dots (HCQDs) were grown by alternately depositing In_0.4Ga_0.6N QD and In_0.1Ga _0.9N spacer layers on a seed In_0.4Ga_0.6N QD layer. Structural and optical studies showed that the height of the InGaN QDs was controlled by the deposition cycle of In_0.4Ga_0.6N/ In_0.1Ga_0.9N layers. Photoluminescence studies showed that the In_0.4Ga_0.6N HCQDs provided deep potential wells and the piezoelectric field-induced quantum-confined Stark effect was negligibly small. These phenomena are attributed to variation in quantum confinement energy in the electronically coupled InGaN HCQDs providing deep potential wells.

Original language	English
Pages (from-to)	2065-2068
Number of pages	4
Journal	Journal of Crystal Growth
Volume	312
Issue number	14
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.04.025
State	Published - 2010.07.1

Keywords

A1. Growth models
A1. Low dimensional structures
A3. Metalorganic chemical vapor deposition
B1. Nitrides
B2. Semiconducting IIIV materials
B3. Light-emitting diodes

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Chemistry
Physics & Astronomy

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10.1016/j.jcrysgro.2010.04.025

Cite this

@article{af4ce6b8e2034e198876f4af522a243a,

title = "Growth of height-controlled InGaN quantum dots on GaN",

abstract = "InGaN height-controlled quantum dots (HCQDs) were grown by alternately depositing In0.4Ga0.6N QD and In0.1Ga 0.9N spacer layers on a seed In0.4Ga0.6N QD layer. Structural and optical studies showed that the height of the InGaN QDs was controlled by the deposition cycle of In0.4Ga0.6N/ In0.1Ga0.9N layers. Photoluminescence studies showed that the In0.4Ga0.6N HCQDs provided deep potential wells and the piezoelectric field-induced quantum-confined Stark effect was negligibly small. These phenomena are attributed to variation in quantum confinement energy in the electronically coupled InGaN HCQDs providing deep potential wells.",

keywords = "A1. Growth models, A1. Low dimensional structures, A3. Metalorganic chemical vapor deposition, B1. Nitrides, B2. Semiconducting IIIV materials, B3. Light-emitting diodes",

author = "Park, \{Il Kyu\} and Park, \{Seong Ju\} and Choi, \{Chel Jong\}",

year = "2010",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2010.04.025",

language = "English",

volume = "312",

pages = "2065--2068",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "14",

}

TY - JOUR

T1 - Growth of height-controlled InGaN quantum dots on GaN

AU - Park, Il Kyu

AU - Park, Seong Ju

AU - Choi, Chel Jong

PY - 2010/7/1

Y1 - 2010/7/1

N2 - InGaN height-controlled quantum dots (HCQDs) were grown by alternately depositing In0.4Ga0.6N QD and In0.1Ga 0.9N spacer layers on a seed In0.4Ga0.6N QD layer. Structural and optical studies showed that the height of the InGaN QDs was controlled by the deposition cycle of In0.4Ga0.6N/ In0.1Ga0.9N layers. Photoluminescence studies showed that the In0.4Ga0.6N HCQDs provided deep potential wells and the piezoelectric field-induced quantum-confined Stark effect was negligibly small. These phenomena are attributed to variation in quantum confinement energy in the electronically coupled InGaN HCQDs providing deep potential wells.

AB - InGaN height-controlled quantum dots (HCQDs) were grown by alternately depositing In0.4Ga0.6N QD and In0.1Ga 0.9N spacer layers on a seed In0.4Ga0.6N QD layer. Structural and optical studies showed that the height of the InGaN QDs was controlled by the deposition cycle of In0.4Ga0.6N/ In0.1Ga0.9N layers. Photoluminescence studies showed that the In0.4Ga0.6N HCQDs provided deep potential wells and the piezoelectric field-induced quantum-confined Stark effect was negligibly small. These phenomena are attributed to variation in quantum confinement energy in the electronically coupled InGaN HCQDs providing deep potential wells.

KW - A1. Growth models

KW - A1. Low dimensional structures

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Nitrides

KW - B2. Semiconducting IIIV materials

KW - B3. Light-emitting diodes

UR - https://www.scopus.com/pages/publications/77955232207

U2 - 10.1016/j.jcrysgro.2010.04.025

DO - 10.1016/j.jcrysgro.2010.04.025

M3 - Journal article

AN - SCOPUS:77955232207

SN - 0022-0248

VL - 312

SP - 2065

EP - 2068

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 14

ER -

Growth of height-controlled InGaN quantum dots on GaN

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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