Growth of ZnO thin film on p-GaN/sapphire (0 0 0 1) by simple hydrothermal technique

Trilochan Sahoo; Eun Sil Kang; Myoung Kim; Vasudevan Kannan; Yeon Tae Yu; Dong Chan Shin; Tae Geun Kim; In Hwan Lee

doi:10.1016/j.jcrysgro.2007.11.026

Growth of ZnO thin film on p-GaN/sapphire (0 0 0 1) by simple hydrothermal technique

Trilochan Sahoo
, Eun Sil Kang
, Myoung Kim
, Vasudevan Kannan
, Yeon Tae Yu
, Dong Chan Shin
, Tae Geun Kim
, In Hwan Lee^*

^*Corresponding author for this work

Information Materials Engineering

Jeonbuk National University
Chosun University
Korea University

Research output: Contribution to journal › Journal article › peer-review

10 Scopus citations

Abstract

Zinc oxide (ZnO) heteroepitaxial thin films were successfully grown on p-GaN/sapphire (0 0 0 1) by single-step hydrothermal route at a low temperature of 90 °C. Continuous ZnO thin films with c-axis orientation were grown in aqueous solution of zinc acetate di-hydrate and ammonium hydroxide. X-ray diffraction, scanning electron microscopy and room temperature photoluminescence were carried out for structural, morphological and optical property analysis. The as-grown ZnO films showed preferential growth along (0 0 0 1) direction. The in-plane orientation between ZnO thin film and p-GaN buffer layer was found to be [1 1 2̄ 0]_ZnO∥[1 1 2̄ 0]_GaN. Sharp luminescence peak centered at 377 nm due to excitonic recombination from ZnO thin film was observed.

Original language	English
Pages (from-to)	570-574
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	3
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.11.026
State	Published - 2008.02.1

Keywords

A1. Crystal structure
A1. X-ray diffraction
A2. Hydrothermal crystal growth
A3. Thin film
B1. Zinc compounds
B2. Semiconducting II-VI materials

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Chemistry
Physics & Astronomy

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10.1016/j.jcrysgro.2007.11.026

Cite this

@article{d336a3afa0cd4f9a927c3b0be779ab1d,

title = "Growth of ZnO thin film on p-GaN/sapphire (0 0 0 1) by simple hydrothermal technique",

abstract = "Zinc oxide (ZnO) heteroepitaxial thin films were successfully grown on p-GaN/sapphire (0 0 0 1) by single-step hydrothermal route at a low temperature of 90 °C. Continuous ZnO thin films with c-axis orientation were grown in aqueous solution of zinc acetate di-hydrate and ammonium hydroxide. X-ray diffraction, scanning electron microscopy and room temperature photoluminescence were carried out for structural, morphological and optical property analysis. The as-grown ZnO films showed preferential growth along (0 0 0 1) direction. The in-plane orientation between ZnO thin film and p-GaN buffer layer was found to be [1 1 {\=2} 0]ZnO∥[1 1 {\=2} 0]GaN. Sharp luminescence peak centered at 377 nm due to excitonic recombination from ZnO thin film was observed.",

keywords = "A1. Crystal structure, A1. X-ray diffraction, A2. Hydrothermal crystal growth, A3. Thin film, B1. Zinc compounds, B2. Semiconducting II-VI materials",

author = "Trilochan Sahoo and Kang, \{Eun Sil\} and Myoung Kim and Vasudevan Kannan and Yu, \{Yeon Tae\} and Shin, \{Dong Chan\} and Kim, \{Tae Geun\} and Lee, \{In Hwan\}",

year = "2008",

month = feb,

day = "1",

doi = "10.1016/j.jcrysgro.2007.11.026",

language = "English",

volume = "310",

pages = "570--574",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "3",

}

TY - JOUR

T1 - Growth of ZnO thin film on p-GaN/sapphire (0 0 0 1) by simple hydrothermal technique

AU - Sahoo, Trilochan

AU - Kang, Eun Sil

AU - Kim, Myoung

AU - Kannan, Vasudevan

AU - Yu, Yeon Tae

AU - Shin, Dong Chan

AU - Kim, Tae Geun

AU - Lee, In Hwan

PY - 2008/2/1

Y1 - 2008/2/1

N2 - Zinc oxide (ZnO) heteroepitaxial thin films were successfully grown on p-GaN/sapphire (0 0 0 1) by single-step hydrothermal route at a low temperature of 90 °C. Continuous ZnO thin films with c-axis orientation were grown in aqueous solution of zinc acetate di-hydrate and ammonium hydroxide. X-ray diffraction, scanning electron microscopy and room temperature photoluminescence were carried out for structural, morphological and optical property analysis. The as-grown ZnO films showed preferential growth along (0 0 0 1) direction. The in-plane orientation between ZnO thin film and p-GaN buffer layer was found to be [1 1 2̄ 0]ZnO∥[1 1 2̄ 0]GaN. Sharp luminescence peak centered at 377 nm due to excitonic recombination from ZnO thin film was observed.

AB - Zinc oxide (ZnO) heteroepitaxial thin films were successfully grown on p-GaN/sapphire (0 0 0 1) by single-step hydrothermal route at a low temperature of 90 °C. Continuous ZnO thin films with c-axis orientation were grown in aqueous solution of zinc acetate di-hydrate and ammonium hydroxide. X-ray diffraction, scanning electron microscopy and room temperature photoluminescence were carried out for structural, morphological and optical property analysis. The as-grown ZnO films showed preferential growth along (0 0 0 1) direction. The in-plane orientation between ZnO thin film and p-GaN buffer layer was found to be [1 1 2̄ 0]ZnO∥[1 1 2̄ 0]GaN. Sharp luminescence peak centered at 377 nm due to excitonic recombination from ZnO thin film was observed.

KW - A1. Crystal structure

KW - A1. X-ray diffraction

KW - A2. Hydrothermal crystal growth

KW - A3. Thin film

KW - B1. Zinc compounds

KW - B2. Semiconducting II-VI materials

UR - https://www.scopus.com/pages/publications/37849019011

U2 - 10.1016/j.jcrysgro.2007.11.026

DO - 10.1016/j.jcrysgro.2007.11.026

M3 - Journal article

AN - SCOPUS:37849019011

SN - 0022-0248

VL - 310

SP - 570

EP - 574

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Growth of ZnO thin film on p-GaN/sapphire (0 0 0 1) by simple hydrothermal technique

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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