Growth process of β-FeSi                         2                          epitaxial film on Si(1 1 1) by molecular beam epitaxy

S. Y. Ji; J. F. Wang; J. W. Lim; M. Isshiki

doi:10.1016/j.apsusc.2005.12.121

Growth process of β-FeSi ₂ epitaxial film on Si(1 1 1) by molecular beam epitaxy

S. Y. Ji^*
, J. F. Wang
, J. W. Lim
, M. Isshiki

^*Corresponding author for this work

Metallurgical System Engineering

Tohoku University

Research output: Contribution to journal › Journal article › peer-review

9 Scopus citations

Abstract

We have reported a one step growth of a high quality β-FeSi ₂ epitaxial film on hydrogen terminated Si(1 1 1) by using molecular beam epitaxy (MBE) without template layer or post-growth annealing. In the present work, the growth process was studied by analyzing X-ray diffraction (XRD) spectra, reflective high energy electron diffraction (RHEED) and atomic force microscopy (AFM) observations on the samples grown with different growth times from 10 s to 1 h. A phase transformation from γ-FeSi ₂ to β-FeSi ₂ was confirmed existing in the crystal film growth, as well as the growth mode changing from three-dimensional (3D) to two-dimensional (2D) mode.

Original language	English
Pages (from-to)	444-448
Number of pages	5
Journal	Applied Surface Science
Volume	253
Issue number	2
DOIs	https://doi.org/10.1016/j.apsusc.2005.12.121
State	Published - 2006.11.15

Keywords

Growth process
MBE
RHEED
β-FeSi

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10.1016/j.apsusc.2005.12.121

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title = "Growth process of β-FeSi 2 epitaxial film on Si(1 1 1) by molecular beam epitaxy",

abstract = " We have reported a one step growth of a high quality β-FeSi 2 epitaxial film on hydrogen terminated Si(1 1 1) by using molecular beam epitaxy (MBE) without template layer or post-growth annealing. In the present work, the growth process was studied by analyzing X-ray diffraction (XRD) spectra, reflective high energy electron diffraction (RHEED) and atomic force microscopy (AFM) observations on the samples grown with different growth times from 10 s to 1 h. A phase transformation from γ-FeSi 2 to β-FeSi 2 was confirmed existing in the crystal film growth, as well as the growth mode changing from three-dimensional (3D) to two-dimensional (2D) mode.",

keywords = "Growth process, MBE, RHEED, β-FeSi",

author = "Ji, \{S. Y.\} and Wang, \{J. F.\} and Lim, \{J. W.\} and M. Isshiki",

year = "2006",

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doi = "10.1016/j.apsusc.2005.12.121",

language = "English",

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journal = "Applied Surface Science",

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TY - JOUR

T1 - Growth process of β-FeSi 2 epitaxial film on Si(1 1 1) by molecular beam epitaxy

AU - Ji, S. Y.

AU - Wang, J. F.

AU - Lim, J. W.

AU - Isshiki, M.

PY - 2006/11/15

Y1 - 2006/11/15

N2 - We have reported a one step growth of a high quality β-FeSi 2 epitaxial film on hydrogen terminated Si(1 1 1) by using molecular beam epitaxy (MBE) without template layer or post-growth annealing. In the present work, the growth process was studied by analyzing X-ray diffraction (XRD) spectra, reflective high energy electron diffraction (RHEED) and atomic force microscopy (AFM) observations on the samples grown with different growth times from 10 s to 1 h. A phase transformation from γ-FeSi 2 to β-FeSi 2 was confirmed existing in the crystal film growth, as well as the growth mode changing from three-dimensional (3D) to two-dimensional (2D) mode.

AB - We have reported a one step growth of a high quality β-FeSi 2 epitaxial film on hydrogen terminated Si(1 1 1) by using molecular beam epitaxy (MBE) without template layer or post-growth annealing. In the present work, the growth process was studied by analyzing X-ray diffraction (XRD) spectra, reflective high energy electron diffraction (RHEED) and atomic force microscopy (AFM) observations on the samples grown with different growth times from 10 s to 1 h. A phase transformation from γ-FeSi 2 to β-FeSi 2 was confirmed existing in the crystal film growth, as well as the growth mode changing from three-dimensional (3D) to two-dimensional (2D) mode.

KW - Growth process

KW - MBE

KW - RHEED

KW - β-FeSi

UR - https://www.scopus.com/pages/publications/33845437087

U2 - 10.1016/j.apsusc.2005.12.121

DO - 10.1016/j.apsusc.2005.12.121

M3 - Journal article

AN - SCOPUS:33845437087

SN - 0169-4332

VL - 253

SP - 444

EP - 448

JO - Applied Surface Science

JF - Applied Surface Science

IS - 2

ER -

Growth process of β-FeSi ₂ epitaxial film on Si(1 1 1) by molecular beam epitaxy

Abstract

Keywords

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