TY - GEN
T1 - HBT Doherty amplifier using ballast resistor control and arbitrary termination impedance power divider
AU - Ryu, Nam Sik
AU - Kim, Su Tae
AU - Seo, Su Jin
AU - Jeong, Yong Chae
PY - 2005
Y1 - 2005
N2 - In this paper, a new HBT Doherty amplifier is designed with arbitrary termination impedance power divider and ballast resistor control method to enhance the dynamic gain flatness. By using the arbitrary termination impedance power divider, circuit size of the proposed HBT Doherty amplifier has been reduced considerably. Also, due to the fact that the gain of a peaking amplifier usually deteriorates the dynamic gain flatness of a Doherty amplifier, we proposed a novel technique of controlling ballast resistors according to the bias condition of a peaking amplifier. By tuning the ballast resistors and bias of peaking amplifier, we improved gain flatness of a Doherty amplifier maintaining permissible power added efficiency (PAE) at the same time. The proposed Doherty amplifier is designed at 1.9GHz with Knowledge-on HBT process. Obtained the maximum power and the power gain through the simulation are 29dBm and 14.4dB, respectively. The PAE at the maximum output power was 64% with 3.3V supply voltage and achieved more than 60% over 5dB range.
AB - In this paper, a new HBT Doherty amplifier is designed with arbitrary termination impedance power divider and ballast resistor control method to enhance the dynamic gain flatness. By using the arbitrary termination impedance power divider, circuit size of the proposed HBT Doherty amplifier has been reduced considerably. Also, due to the fact that the gain of a peaking amplifier usually deteriorates the dynamic gain flatness of a Doherty amplifier, we proposed a novel technique of controlling ballast resistors according to the bias condition of a peaking amplifier. By tuning the ballast resistors and bias of peaking amplifier, we improved gain flatness of a Doherty amplifier maintaining permissible power added efficiency (PAE) at the same time. The proposed Doherty amplifier is designed at 1.9GHz with Knowledge-on HBT process. Obtained the maximum power and the power gain through the simulation are 29dBm and 14.4dB, respectively. The PAE at the maximum output power was 64% with 3.3V supply voltage and achieved more than 60% over 5dB range.
KW - Arbitrary impedance matching
KW - Ballast resistor control
KW - HBT Doherty amplifier
UR - https://www.scopus.com/pages/publications/33847191039
U2 - 10.1109/APMC.2005.1606409
DO - 10.1109/APMC.2005.1606409
M3 - Conference paper
AN - SCOPUS:33847191039
SN - 078039433X
SN - 9780780394339
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
BT - APMC 2005
T2 - APMC 2005: Asia-Pacific Microwave Conference 2005
Y2 - 4 December 2005 through 7 December 2005
ER -