High brightness, large scale GaN based light-emitting diode grown on 8-inch Si substrate

Seung Jae Lee; Jae Chul Song; Hyung Jo Park; Jun Beom Park; Seong Ran Jeon; Cheul Ro Lee; Dae Woo Jeon; Jong Hyeob Baek

doi:10.1149/2.0151508jss

High brightness, large scale GaN based light-emitting diode grown on 8-inch Si substrate

Seung Jae Lee
, Jae Chul Song
, Hyung Jo Park
, Jun Beom Park
, Seong Ran Jeon
, Cheul Ro Lee
, Dae Woo Jeon
, Jong Hyeob Baek

Information Materials Engineering

Korea Photonics Technology Institute
Veeco Instruments Inc.
Jeonbuk National University
Chonnam National University
Korea Institute of Ceramic Engineering And Technology

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

A crack-free, uniform InGaN/GaN light-emitting diode (LED) structure with strain-engineered buffer layer was grown on an 8-inch diameter Si(111) substrate. The full width at half maximum (FWHM) of (002) and (102) ω-scan is 280 and 420 arcsec, respectively. For LED on 8-inch Si, multiple quantum well (MQW) photoluminescence (PL) wavelength uniformity of 0.55% (2.4 nm) has been achieved by using proper curvature engineered wafer carrier. We demonstrated high brightness 1×1 mm² LED devices utilizing vertical chip process then evaluated their device properties. The electro-optical characteristics of the fabricated vertical LED (VLED) shows around 1 W light output power at 1 A injection current with operating voltage of 4.0 V.

Original language	English
Pages (from-to)	Q92-Q95
Journal	ECS Journal of Solid State Science and Technology
Volume	4
Issue number	8
DOIs	https://doi.org/10.1149/2.0151508jss
State	Published - 2015

Quacquarelli Symonds(QS) Subject Topics

Materials Science

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10.1149/2.0151508jss

Cite this

@article{8a4bc852442f413ab918ff58eebc25bb,

title = "High brightness, large scale GaN based light-emitting diode grown on 8-inch Si substrate",

abstract = "A crack-free, uniform InGaN/GaN light-emitting diode (LED) structure with strain-engineered buffer layer was grown on an 8-inch diameter Si(111) substrate. The full width at half maximum (FWHM) of (002) and (102) ω-scan is 280 and 420 arcsec, respectively. For LED on 8-inch Si, multiple quantum well (MQW) photoluminescence (PL) wavelength uniformity of 0.55\% (2.4 nm) has been achieved by using proper curvature engineered wafer carrier. We demonstrated high brightness 1×1 mm2 LED devices utilizing vertical chip process then evaluated their device properties. The electro-optical characteristics of the fabricated vertical LED (VLED) shows around 1 W light output power at 1 A injection current with operating voltage of 4.0 V.",

author = "Lee, \{Seung Jae\} and Song, \{Jae Chul\} and Park, \{Hyung Jo\} and Park, \{Jun Beom\} and Jeon, \{Seong Ran\} and Lee, \{Cheul Ro\} and Jeon, \{Dae Woo\} and Baek, \{Jong Hyeob\}",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2015. Published by ECS.",

year = "2015",

doi = "10.1149/2.0151508jss",

language = "English",

volume = "4",

pages = "Q92--Q95",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

number = "8",

}

TY - JOUR

T1 - High brightness, large scale GaN based light-emitting diode grown on 8-inch Si substrate

AU - Lee, Seung Jae

AU - Song, Jae Chul

AU - Park, Hyung Jo

AU - Park, Jun Beom

AU - Jeon, Seong Ran

AU - Lee, Cheul Ro

AU - Jeon, Dae Woo

AU - Baek, Jong Hyeob

PY - 2015

Y1 - 2015

N2 - A crack-free, uniform InGaN/GaN light-emitting diode (LED) structure with strain-engineered buffer layer was grown on an 8-inch diameter Si(111) substrate. The full width at half maximum (FWHM) of (002) and (102) ω-scan is 280 and 420 arcsec, respectively. For LED on 8-inch Si, multiple quantum well (MQW) photoluminescence (PL) wavelength uniformity of 0.55% (2.4 nm) has been achieved by using proper curvature engineered wafer carrier. We demonstrated high brightness 1×1 mm2 LED devices utilizing vertical chip process then evaluated their device properties. The electro-optical characteristics of the fabricated vertical LED (VLED) shows around 1 W light output power at 1 A injection current with operating voltage of 4.0 V.

AB - A crack-free, uniform InGaN/GaN light-emitting diode (LED) structure with strain-engineered buffer layer was grown on an 8-inch diameter Si(111) substrate. The full width at half maximum (FWHM) of (002) and (102) ω-scan is 280 and 420 arcsec, respectively. For LED on 8-inch Si, multiple quantum well (MQW) photoluminescence (PL) wavelength uniformity of 0.55% (2.4 nm) has been achieved by using proper curvature engineered wafer carrier. We demonstrated high brightness 1×1 mm2 LED devices utilizing vertical chip process then evaluated their device properties. The electro-optical characteristics of the fabricated vertical LED (VLED) shows around 1 W light output power at 1 A injection current with operating voltage of 4.0 V.

UR - https://www.scopus.com/pages/publications/84937570489

U2 - 10.1149/2.0151508jss

DO - 10.1149/2.0151508jss

M3 - Journal article

AN - SCOPUS:84937570489

SN - 2162-8769

VL - 4

SP - Q92-Q95

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 8

ER -

High brightness, large scale GaN based light-emitting diode grown on 8-inch Si substrate

Abstract

Quacquarelli Symonds(QS) Subject Topics

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