High density plasma etching of Y-Ba-Cu-O superconductors

Y. H. Im; H. G. Kang; B. S. Han; Y. B. Hahn

doi:10.1149/1.1398557

High density plasma etching of Y-Ba-Cu-O superconductors

Y. H. Im
, H. G. Kang
, B. S. Han
, Y. B. Hahn^*

^*Corresponding author for this work

Division of Chemical Engineering

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

6 Scopus citations

Abstract

A parametric study of high density plasma etching of Y-Ba-Cu-O films was carried out in a planar-type inductively coupled plasma (ICP) etcher. The etch rate was a strong function of ICP source power, radio frequency chuck power, and reactor pressure. Practical etch rates of 2500-3500 Å/min were obtained at moderate ICP conditions. The transition temperature (T_c) of the superconductor did not deteriorate during the ICP etch process, and was about 87 K. Etch results showed that ICP etching is a promising technique for patterning high T_c superconducting films into devices.

Original language	English
Pages (from-to)	C77-C79
Journal	Electrochemical and Solid-State Letters
Volume	4
Issue number	10
DOIs	https://doi.org/10.1149/1.1398557
State	Published - 2001.10

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Engineering - Chemical
Chemistry

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title = "High density plasma etching of Y-Ba-Cu-O superconductors",

abstract = "A parametric study of high density plasma etching of Y-Ba-Cu-O films was carried out in a planar-type inductively coupled plasma (ICP) etcher. The etch rate was a strong function of ICP source power, radio frequency chuck power, and reactor pressure. Practical etch rates of 2500-3500 {\AA}/min were obtained at moderate ICP conditions. The transition temperature (Tc) of the superconductor did not deteriorate during the ICP etch process, and was about 87 K. Etch results showed that ICP etching is a promising technique for patterning high Tc superconducting films into devices.",

author = "Im, \{Y. H.\} and Kang, \{H. G.\} and Han, \{B. S.\} and Hahn, \{Y. B.\}",

year = "2001",

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T1 - High density plasma etching of Y-Ba-Cu-O superconductors

AU - Im, Y. H.

AU - Kang, H. G.

AU - Han, B. S.

AU - Hahn, Y. B.

PY - 2001/10

Y1 - 2001/10

N2 - A parametric study of high density plasma etching of Y-Ba-Cu-O films was carried out in a planar-type inductively coupled plasma (ICP) etcher. The etch rate was a strong function of ICP source power, radio frequency chuck power, and reactor pressure. Practical etch rates of 2500-3500 Å/min were obtained at moderate ICP conditions. The transition temperature (Tc) of the superconductor did not deteriorate during the ICP etch process, and was about 87 K. Etch results showed that ICP etching is a promising technique for patterning high Tc superconducting films into devices.

AB - A parametric study of high density plasma etching of Y-Ba-Cu-O films was carried out in a planar-type inductively coupled plasma (ICP) etcher. The etch rate was a strong function of ICP source power, radio frequency chuck power, and reactor pressure. Practical etch rates of 2500-3500 Å/min were obtained at moderate ICP conditions. The transition temperature (Tc) of the superconductor did not deteriorate during the ICP etch process, and was about 87 K. Etch results showed that ICP etching is a promising technique for patterning high Tc superconducting films into devices.

UR - https://www.scopus.com/pages/publications/0035496799

U2 - 10.1149/1.1398557

DO - 10.1149/1.1398557

M3 - Journal article

AN - SCOPUS:0035496799

SN - 1099-0062

VL - 4

SP - C77-C79

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

High density plasma etching of Y-Ba-Cu-O superconductors

Abstract

Quacquarelli Symonds(QS) Subject Topics

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