High density silicon nanocrystal embedded in SiN prepared by low energy <500eV SiH4 plasma immersion ion implantation for non-volatile memory applications

Sangmoo Choi; Hyejung Choi; Tae Wook Kim; Hyundeok Yang; Takhee Lee; Sanghun Jeon; Chungwoo Kim; Hyunsang Hwang

High density silicon nanocrystal embedded in SiN prepared by low energy <500eV SiH₄ plasma immersion ion implantation for non-volatile memory applications

Sangmoo Choi^*
, Hyejung Choi
, Tae Wook Kim
, Hyundeok Yang
, Takhee Lee
, Sanghun Jeon
, Chungwoo Kim
, Hyunsang Hwang

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Gwangju Institute of Science and Technology
Samsung

Research output: Contribution to conference › Conference paper › peer-review

16 Scopus citations

Abstract

We report on the excellent memory properties of silicon nanocrystals (Si-NCs) embedded in SiN. Si-NCs were formed by SiH₄ low-energy plasma immersion ion implantation. Compared with control Si⁺- implanted sample, additional hydrogen enhanced Si-NC density. By incorporating Si-NCs in SiN, improved program/erase efficiency, endurance and retention characteristics were observed due to the generation of additional accessible deep charge traps. Using conductive atomic force microscopy and MIS device with gate area of 100 nm², charge trapping/detrapping and multi-level charge storage of single Si-NC at room temperature were observed.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	166-169
Number of pages	4
State	Published - 2005
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005.12.5 → 2005.12.7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Conference

Conference	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	05.12.5 → 05.12.7

Cite this

Choi, S., Choi, H., Kim, T. W., Yang, H., Lee, T., Jeon, S., Kim, C., & Hwang, H. (2005). High density silicon nanocrystal embedded in SiN prepared by low energy <500eV SiH₄ plasma immersion ion implantation for non-volatile memory applications. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 166-169). Article 1609296 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Choi, Sangmoo ; Choi, Hyejung ; Kim, Tae Wook et al. / High density silicon nanocrystal embedded in SiN prepared by low energy <500eV SiH₄ plasma immersion ion implantation for non-volatile memory applications. IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. pp. 166-169 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{c4585c1fd6e14904a4d8dac48f8ae31c,

title = "High density silicon nanocrystal embedded in SiN prepared by low energy <500eV SiH4 plasma immersion ion implantation for non-volatile memory applications",

abstract = "We report on the excellent memory properties of silicon nanocrystals (Si-NCs) embedded in SiN. Si-NCs were formed by SiH4 low-energy plasma immersion ion implantation. Compared with control Si+- implanted sample, additional hydrogen enhanced Si-NC density. By incorporating Si-NCs in SiN, improved program/erase efficiency, endurance and retention characteristics were observed due to the generation of additional accessible deep charge traps. Using conductive atomic force microscopy and MIS device with gate area of 100 nm2, charge trapping/detrapping and multi-level charge storage of single Si-NC at room temperature were observed.",

author = "Sangmoo Choi and Hyejung Choi and Kim, \{Tae Wook\} and Hyundeok Yang and Takhee Lee and Sanghun Jeon and Chungwoo Kim and Hyunsang Hwang",

year = "2005",

language = "English",

isbn = "078039268X",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "166--169",

booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",

note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",

}

Choi, S, Choi, H, Kim, TW, Yang, H, Lee, T, Jeon, S, Kim, C & Hwang, H 2005, High density silicon nanocrystal embedded in SiN prepared by low energy <500eV SiH₄ plasma immersion ion implantation for non-volatile memory applications. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609296, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 166-169, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05.12.5.

High density silicon nanocrystal embedded in SiN prepared by low energy <500eV SiH₄ plasma immersion ion implantation for non-volatile memory applications. / Choi, Sangmoo; Choi, Hyejung; Kim, Tae Wook et al.
IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 166-169 1609296 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - High density silicon nanocrystal embedded in SiN prepared by low energy <500eV SiH4 plasma immersion ion implantation for non-volatile memory applications

AU - Choi, Sangmoo

AU - Choi, Hyejung

AU - Kim, Tae Wook

AU - Yang, Hyundeok

AU - Lee, Takhee

AU - Jeon, Sanghun

AU - Kim, Chungwoo

AU - Hwang, Hyunsang

PY - 2005

Y1 - 2005

N2 - We report on the excellent memory properties of silicon nanocrystals (Si-NCs) embedded in SiN. Si-NCs were formed by SiH4 low-energy plasma immersion ion implantation. Compared with control Si+- implanted sample, additional hydrogen enhanced Si-NC density. By incorporating Si-NCs in SiN, improved program/erase efficiency, endurance and retention characteristics were observed due to the generation of additional accessible deep charge traps. Using conductive atomic force microscopy and MIS device with gate area of 100 nm2, charge trapping/detrapping and multi-level charge storage of single Si-NC at room temperature were observed.

AB - We report on the excellent memory properties of silicon nanocrystals (Si-NCs) embedded in SiN. Si-NCs were formed by SiH4 low-energy plasma immersion ion implantation. Compared with control Si+- implanted sample, additional hydrogen enhanced Si-NC density. By incorporating Si-NCs in SiN, improved program/erase efficiency, endurance and retention characteristics were observed due to the generation of additional accessible deep charge traps. Using conductive atomic force microscopy and MIS device with gate area of 100 nm2, charge trapping/detrapping and multi-level charge storage of single Si-NC at room temperature were observed.

UR - https://www.scopus.com/pages/publications/33847753063

M3 - Conference paper

AN - SCOPUS:33847753063

SN - 078039268X

SN - 9780780392687

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 166

EP - 169

BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

Y2 - 5 December 2005 through 7 December 2005

ER -

Choi S, Choi H, Kim TW, Yang H, Lee T, Jeon S et al. High density silicon nanocrystal embedded in SiN prepared by low energy <500eV SiH₄ plasma immersion ion implantation for non-volatile memory applications. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 166-169. 1609296. (Technical Digest - International Electron Devices Meeting, IEDM).

High density silicon nanocrystal embedded in SiN prepared by low energy <500eV SiH₄ plasma immersion ion implantation for non-volatile memory applications

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