High-efficiency GaN-based vertical light-emitting diodes with periodic beveled rod-shaped structures

Seung Hwan Kim; Hyun Ho Park; Gye Mo Yang; Sang Hern Lee; Jong Hyub Baek; Jun Seok Ha; Young Ho Song; Seong Ran Jeon; Hyung Jo Park

doi:10.1166/jnn.2013.7475

High-efficiency GaN-based vertical light-emitting diodes with periodic beveled rod-shaped structures

Seung Hwan Kim
, Hyun Ho Park
, Gye Mo Yang
, Sang Hern Lee
, Jong Hyub Baek
, Jun Seok Ha
, Young Ho Song
, Seong Ran Jeon
, Hyung Jo Park^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Korea Photonics Technology Institute
Jeonbuk National University
Chonnam National University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

The periodic beveled micro-rods (BMRs) were constructed on the emission surface of GaN-based vertical light-emitting diodes (VLEDs) in order to improve the light-extraction efficiency. It was experimentally demonstrated that the light output power of the VLEDs with a periodic BMR (BMR-VLED) were enhanced about 15.6%, compared with that of the VLEDs with randomly textured surface (RT-VLED) at an injection current of 350 mA. This finding indicates that the photons emitted from the active layer were well out-coupled at an n-GaN surface having a periodic BMR structure, resulting in an increase in the probability of escaping from the VLED structure.

Original language	English
Pages (from-to)	4325-4329
Number of pages	5
Journal	Journal of nanoscience and nanotechnology
Volume	13
Issue number	6
DOIs	https://doi.org/10.1166/jnn.2013.7475
State	Published - 2013.06

Keywords

Light emitting diode
Light-extraction efficiency
Three-dimensional finite-difference time-domain (3D-FDTD)

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Chemical
Chemistry
Physics & Astronomy
Biological Sciences

Access to Document

10.1166/jnn.2013.7475

Cite this

@article{4927a1fbd440477d98b573c6e6d5ce08,

title = "High-efficiency GaN-based vertical light-emitting diodes with periodic beveled rod-shaped structures",

abstract = "The periodic beveled micro-rods (BMRs) were constructed on the emission surface of GaN-based vertical light-emitting diodes (VLEDs) in order to improve the light-extraction efficiency. It was experimentally demonstrated that the light output power of the VLEDs with a periodic BMR (BMR-VLED) were enhanced about 15.6\%, compared with that of the VLEDs with randomly textured surface (RT-VLED) at an injection current of 350 mA. This finding indicates that the photons emitted from the active layer were well out-coupled at an n-GaN surface having a periodic BMR structure, resulting in an increase in the probability of escaping from the VLED structure.",

keywords = "Light emitting diode, Light-extraction efficiency, Three-dimensional finite-difference time-domain (3D-FDTD)",

author = "Kim, \{Seung Hwan\} and Park, \{Hyun Ho\} and Yang, \{Gye Mo\} and Lee, \{Sang Hern\} and Baek, \{Jong Hyub\} and Ha, \{Jun Seok\} and Song, \{Young Ho\} and Jeon, \{Seong Ran\} and Park, \{Hyung Jo\}",

year = "2013",

month = jun,

doi = "10.1166/jnn.2013.7475",

language = "English",

volume = "13",

pages = "4325--4329",

journal = "Journal of nanoscience and nanotechnology",

issn = "1533-4880",

number = "6",

}

TY - JOUR

T1 - High-efficiency GaN-based vertical light-emitting diodes with periodic beveled rod-shaped structures

AU - Kim, Seung Hwan

AU - Park, Hyun Ho

AU - Yang, Gye Mo

AU - Lee, Sang Hern

AU - Baek, Jong Hyub

AU - Ha, Jun Seok

AU - Song, Young Ho

AU - Jeon, Seong Ran

AU - Park, Hyung Jo

PY - 2013/6

Y1 - 2013/6

N2 - The periodic beveled micro-rods (BMRs) were constructed on the emission surface of GaN-based vertical light-emitting diodes (VLEDs) in order to improve the light-extraction efficiency. It was experimentally demonstrated that the light output power of the VLEDs with a periodic BMR (BMR-VLED) were enhanced about 15.6%, compared with that of the VLEDs with randomly textured surface (RT-VLED) at an injection current of 350 mA. This finding indicates that the photons emitted from the active layer were well out-coupled at an n-GaN surface having a periodic BMR structure, resulting in an increase in the probability of escaping from the VLED structure.

AB - The periodic beveled micro-rods (BMRs) were constructed on the emission surface of GaN-based vertical light-emitting diodes (VLEDs) in order to improve the light-extraction efficiency. It was experimentally demonstrated that the light output power of the VLEDs with a periodic BMR (BMR-VLED) were enhanced about 15.6%, compared with that of the VLEDs with randomly textured surface (RT-VLED) at an injection current of 350 mA. This finding indicates that the photons emitted from the active layer were well out-coupled at an n-GaN surface having a periodic BMR structure, resulting in an increase in the probability of escaping from the VLED structure.

KW - Light emitting diode

KW - Light-extraction efficiency

KW - Three-dimensional finite-difference time-domain (3D-FDTD)

UR - https://www.scopus.com/pages/publications/84878685438

U2 - 10.1166/jnn.2013.7475

DO - 10.1166/jnn.2013.7475

M3 - Journal article

AN - SCOPUS:84878685438

SN - 1533-4880

VL - 13

SP - 4325

EP - 4329

JO - Journal of nanoscience and nanotechnology

JF - Journal of nanoscience and nanotechnology

IS - 6

ER -

High-efficiency GaN-based vertical light-emitting diodes with periodic beveled rod-shaped structures

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this