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High-energy-electron-beam induced oxidation of an aluminum film

  • Kyoung Jae Lee
  • , Sukmin Chung
  • , Kyuwook Ihm*
  • , Tai Hee Kang
  • , Yong Woon Choi
  • , Young Hwan Han
  • , Ki Ho Yang
  • , Byung Cheol Lee
  • *Corresponding author for this work
  • Pohang University of Science and Technology
  • Pohang Accelerator Laboratory
  • Korea Atomic Energy Research Institute

Research output: Contribution to journalJournal articlepeer-review

Abstract

The surface properties of Al thin films (500 Å) modified by irradiation with high-energy electron beams (0.3, 1, or 2 MeV with a flux of 7 × 108 electrons·cm-2·s-1) have been investigated using synchrotron-radiation photoelectron emission spectroscopy. No morphological changes were observed, but increased oxidation of the Al films was observed when they were irradiated for longer than 40 min. Selective oxidation of the irradiated regions of the Al films was achieved using shadow masking. A scanning photoemission electron microscopy image at the O l s core level clearly showed spatially resolved oxidation contrast in the Al layer.

Original languageEnglish
Pages (from-to)109-111
Number of pages3
JournalJournal of the Korean Physical Society
Volume58
Issue number1
DOIs
StatePublished - 2011.01.14

Keywords

  • E-beam
  • Oxidation of aluminum
  • X-ray spectroscopy

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