High-I_C YBCO films fabricated by the MOD process

We report a successful fabrication of high-I_C YBCO films on the LaAlO₃ (1 0 0) substrate by the MOD process with the single dip-coating method. The coating solution was made by mixing the fluorine-free precursor solution containing Y and Cu with Ba-fluorine precursor solution. The total decomposition time could be reduced only to 3 h with the heat treatment up to 500 °C, and the cracking problem of thicker YBCO films prepared by the conventional TFA-MOD method could be avoided. Optimally processed YBCO film of ∼0.8 μm thickness exhibited high-I_C values over 200 A/cm-width at 77.3 K in a self-field. Our results clearly show that fluorine-free precursors for Y and Cu elements are very effective for the fabrication of high-I_C YBCO films.