Abstract
We present versatile ZnOxNy applicable to a wide range of imaging/display devices. A well-optimized ZnOxNy material exhibits high mobility exceeding 100 cm2/Vs, bandgap of 1.3 eV and nanocrystalline microstructure with multiphase. Accordingly, the performance of ZnOxNy -based device can be adjustable to meet the requisite of future electronic/photonic device elements.
| Original language | English |
|---|---|
| Pages (from-to) | 681-684 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 46 |
| Issue number | Book 2 |
| DOIs | |
| State | Published - 2015.06.1 |
| Event | 2015 SID International Symposium - San Jose, United States Duration: 2015.06.4 → 2015.06.5 |
Keywords
- Amorphous oxide semiconductor TFT
- Femtosecond transient absorption spectroscopy
- Photo-induced current transient spectroscopy
- Transmission electron microscopy
- X-ray photoelectron spectroscopy
- ZnON
Fingerprint
Dive into the research topics of 'High performance nanocrystalline ZnOxNy for imaging and display applications'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver