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High performance nanocrystalline ZnOxNy for imaging and display applications

  • Eunha Lee
  • , Taeho Shin
  • , Anass Benayad
  • , Hyunglk Lee
  • , Dong Su Ko
  • , Hee Goo Kim
  • , Sanghun Jeon
  • , Gyeong Su Park
  • Samsung
  • Korea University

Research output: Contribution to journalConference articlepeer-review

Abstract

We present versatile ZnOxNy applicable to a wide range of imaging/display devices. A well-optimized ZnOxNy material exhibits high mobility exceeding 100 cm2/Vs, bandgap of 1.3 eV and nanocrystalline microstructure with multiphase. Accordingly, the performance of ZnOxNy -based device can be adjustable to meet the requisite of future electronic/photonic device elements.

Original languageEnglish
Pages (from-to)681-684
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume46
Issue numberBook 2
DOIs
StatePublished - 2015.06.1
Event2015 SID International Symposium - San Jose, United States
Duration: 2015.06.42015.06.5

Keywords

  • Amorphous oxide semiconductor TFT
  • Femtosecond transient absorption spectroscopy
  • Photo-induced current transient spectroscopy
  • Transmission electron microscopy
  • X-ray photoelectron spectroscopy
  • ZnON

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