High performance Schottky barrier MOSFETs with workfunction engineering

Moongyu Jang; Yarkyeon Kim; Myungsim Jun; Cheljong Choi

doi:10.1109/SNW.2008.5418432

High performance Schottky barrier MOSFETs with workfunction engineering

Moongyu Jang^*
, Yarkyeon Kim
, Myungsim Jun
, Cheljong Choi

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute

Research output: Contribution to conference › Conference paper › peer-review

1 Scopus citations

Abstract

Various sizes of erbium silicided n-/p-type Schottky barrier MOSFETs are manufactured from 20um to 7mn. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the control of the Schottky barrier height between silicon and ErSi_1.7 is the key factor for the increase of drive current. N-type SOl substrate and strained silicon have very low electron Schottky barrier height. The manufactured 20nm n-/p-type SB-MOSFET showed 550 and 250uA/um saturation current at V_GS-V _T=V_DS=2V condition (T_ox=5nm) with excellent short channel characteristics, which is the highest current level compared with reported data. Also, 100nm and sub 100nm SB-MOSFETs characteristics are obtained.

Original language	English
Title of host publication	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs	https://doi.org/10.1109/SNW.2008.5418432
State	Published - 2008
Event	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States Duration: 2008.06.15 → 2008.06.16

Publication series

Name	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Conference

Conference	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Country/Territory	United States
City	Honolulu, HI
Period	08.06.15 → 08.06.16

Access to Document

10.1109/SNW.2008.5418432

Cite this

@inproceedings{d9f61d207c8a41c99afc694da635b70b,

title = "High performance Schottky barrier MOSFETs with workfunction engineering",

abstract = "Various sizes of erbium silicided n-/p-type Schottky barrier MOSFETs are manufactured from 20um to 7mn. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the control of the Schottky barrier height between silicon and ErSi1.7 is the key factor for the increase of drive current. N-type SOl substrate and strained silicon have very low electron Schottky barrier height. The manufactured 20nm n-/p-type SB-MOSFET showed 550 and 250uA/um saturation current at VGS-V T=VDS=2V condition (Tox=5nm) with excellent short channel characteristics, which is the highest current level compared with reported data. Also, 100nm and sub 100nm SB-MOSFETs characteristics are obtained.",

author = "Moongyu Jang and Yarkyeon Kim and Myungsim Jun and Cheljong Choi",

year = "2008",

doi = "10.1109/SNW.2008.5418432",

language = "English",

isbn = "9781424420711",

series = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

booktitle = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

note = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 ; Conference date: 15-06-2008 Through 16-06-2008",

}

TY - GEN

T1 - High performance Schottky barrier MOSFETs with workfunction engineering

AU - Jang, Moongyu

AU - Kim, Yarkyeon

AU - Jun, Myungsim

AU - Choi, Cheljong

PY - 2008

Y1 - 2008

N2 - Various sizes of erbium silicided n-/p-type Schottky barrier MOSFETs are manufactured from 20um to 7mn. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the control of the Schottky barrier height between silicon and ErSi1.7 is the key factor for the increase of drive current. N-type SOl substrate and strained silicon have very low electron Schottky barrier height. The manufactured 20nm n-/p-type SB-MOSFET showed 550 and 250uA/um saturation current at VGS-V T=VDS=2V condition (Tox=5nm) with excellent short channel characteristics, which is the highest current level compared with reported data. Also, 100nm and sub 100nm SB-MOSFETs characteristics are obtained.

AB - Various sizes of erbium silicided n-/p-type Schottky barrier MOSFETs are manufactured from 20um to 7mn. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the control of the Schottky barrier height between silicon and ErSi1.7 is the key factor for the increase of drive current. N-type SOl substrate and strained silicon have very low electron Schottky barrier height. The manufactured 20nm n-/p-type SB-MOSFET showed 550 and 250uA/um saturation current at VGS-V T=VDS=2V condition (Tox=5nm) with excellent short channel characteristics, which is the highest current level compared with reported data. Also, 100nm and sub 100nm SB-MOSFETs characteristics are obtained.

UR - https://www.scopus.com/pages/publications/77949976344

U2 - 10.1109/SNW.2008.5418432

DO - 10.1109/SNW.2008.5418432

M3 - Conference paper

AN - SCOPUS:77949976344

SN - 9781424420711

T3 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

BT - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

T2 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Y2 - 15 June 2008 through 16 June 2008

ER -

High performance Schottky barrier MOSFETs with workfunction engineering

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