High-performance SiGe pHMOS using reduced-pressure CVD

Kyu Hwan Shim; Young Joo Song; Jin Young Kang

High-performance SiGe pHMOS using reduced-pressure CVD

Kyu Hwan Shim^*
, Young Joo Song
, Jin Young Kang

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute

Research output: Contribution to specialist publication › Article

2 Scopus citations

Abstract

A high-performance SiGe p-type metal-oxide-semiconductor heterostructure field effect transistor (pMOS-HFET or pHMOS) has been developed using a well-controlled boron delta-doping and SiGe/Si heterostructure epitaxial process with reduced-pressure chemical vapor deposition. Along with high-speed operation and excellent 1/f performance comparable to bipolar junction transistors, practical issues like power consumption and thermal dissipation will drive SiGe pHMOS technology into gigabit-scale integration in the sub-decanano generation.

Original language	English
Pages	51-58
Number of pages	8
Volume	47
No	3
Specialist publication	Solid State Technology
State	Published - 2004.03

Cite this

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title = "High-performance SiGe pHMOS using reduced-pressure CVD",

abstract = "A high-performance SiGe p-type metal-oxide-semiconductor heterostructure field effect transistor (pMOS-HFET or pHMOS) has been developed using a well-controlled boron delta-doping and SiGe/Si heterostructure epitaxial process with reduced-pressure chemical vapor deposition. Along with high-speed operation and excellent 1/f performance comparable to bipolar junction transistors, practical issues like power consumption and thermal dissipation will drive SiGe pHMOS technology into gigabit-scale integration in the sub-decanano generation.",

author = "Shim, \{Kyu Hwan\} and Song, \{Young Joo\} and Kang, \{Jin Young\}",

year = "2004",

month = mar,

language = "English",

volume = "47",

pages = "51--58",

journal = "Solid State Technology",

issn = "0038-111X",

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TY - GEN

T1 - High-performance SiGe pHMOS using reduced-pressure CVD

AU - Shim, Kyu Hwan

AU - Song, Young Joo

AU - Kang, Jin Young

PY - 2004/3

Y1 - 2004/3

N2 - A high-performance SiGe p-type metal-oxide-semiconductor heterostructure field effect transistor (pMOS-HFET or pHMOS) has been developed using a well-controlled boron delta-doping and SiGe/Si heterostructure epitaxial process with reduced-pressure chemical vapor deposition. Along with high-speed operation and excellent 1/f performance comparable to bipolar junction transistors, practical issues like power consumption and thermal dissipation will drive SiGe pHMOS technology into gigabit-scale integration in the sub-decanano generation.

AB - A high-performance SiGe p-type metal-oxide-semiconductor heterostructure field effect transistor (pMOS-HFET or pHMOS) has been developed using a well-controlled boron delta-doping and SiGe/Si heterostructure epitaxial process with reduced-pressure chemical vapor deposition. Along with high-speed operation and excellent 1/f performance comparable to bipolar junction transistors, practical issues like power consumption and thermal dissipation will drive SiGe pHMOS technology into gigabit-scale integration in the sub-decanano generation.

UR - https://www.scopus.com/pages/publications/1842682534

M3 - Article

AN - SCOPUS:1842682534

SN - 0038-111X

VL - 47

SP - 51

EP - 58

JO - Solid State Technology

JF - Solid State Technology

ER -

High-performance SiGe pHMOS using reduced-pressure CVD

Abstract

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