High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer

Byounggu Jo; Cheul Ro Lee; Jin Soo Kim; Won Seok Han; Jung Ho Song; Jang Hee Choi; Jae Hyun Ryou; Jin Hong Lee; Jae Young Leem

doi:10.1088/1612-2011/11/11/115815

High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer

Byounggu Jo^*
, Cheul Ro Lee
, Jin Soo Kim
, Won Seok Han
, Jung Ho Song
, Jang Hee Choi
, Jae Hyun Ryou
, Jin Hong Lee
, Jae Young Leem

^*Corresponding author for this work

Information Materials Engineering

Jeonbuk National University
Electronics and Telecommunications Research Institute
Gwangju Institute of Science and Technology
University of Houston
Korea Photonics Technology Institute
Inje University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

We report continuous-wave (CW) operation of an InAs/InGaAsP quantum-dot (QD) heterostructure laser diode (LD) with an output power of 1.1 W at room temperature. This is the first observation on the laser output over 1 W from InAs QD-LDs fabricated on InP substrates. Also, the high-power lasing emission was successfully achieved at up to 60 °C. The improvement in the lasing characteristics can be attributed to enhancement in modal gain of QD-LDs because of the increase in spatial carrier confinement around localized QD states by using a dot-in-a-well structure and a thin GaAs strain-modulating layer.

Original language	English
Article number	115815
Journal	Laser Physics Letters
Volume	11
Issue number	11
DOIs	https://doi.org/10.1088/1612-2011/11/11/115815
State	Published - 2014.11.1

Keywords

dot-in-a-well structure
high-power laser diode
InAs quantum dot
strain-modulating layer

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.1088/1612-2011/11/11/115815

Cite this

@article{7034b7ba423c43719db037c5d4c19f71,

title = "High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer",

abstract = "We report continuous-wave (CW) operation of an InAs/InGaAsP quantum-dot (QD) heterostructure laser diode (LD) with an output power of 1.1 W at room temperature. This is the first observation on the laser output over 1 W from InAs QD-LDs fabricated on InP substrates. Also, the high-power lasing emission was successfully achieved at up to 60 °C. The improvement in the lasing characteristics can be attributed to enhancement in modal gain of QD-LDs because of the increase in spatial carrier confinement around localized QD states by using a dot-in-a-well structure and a thin GaAs strain-modulating layer.",

keywords = "dot-in-a-well structure, high-power laser diode, InAs quantum dot, strain-modulating layer",

author = "Byounggu Jo and Lee, \{Cheul Ro\} and Kim, \{Jin Soo\} and Han, \{Won Seok\} and Song, \{Jung Ho\} and Choi, \{Jang Hee\} and Ryou, \{Jae Hyun\} and Lee, \{Jin Hong\} and Leem, \{Jae Young\}",

note = "Publisher Copyright: {\textcopyright} 2014 Astro Ltd.",

year = "2014",

month = nov,

day = "1",

doi = "10.1088/1612-2011/11/11/115815",

language = "English",

volume = "11",

journal = "Laser Physics Letters",

issn = "1612-2011",

number = "11",

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TY - JOUR

T1 - High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer

AU - Jo, Byounggu

AU - Lee, Cheul Ro

AU - Kim, Jin Soo

AU - Han, Won Seok

AU - Song, Jung Ho

AU - Choi, Jang Hee

AU - Ryou, Jae Hyun

AU - Lee, Jin Hong

AU - Leem, Jae Young

PY - 2014/11/1

Y1 - 2014/11/1

N2 - We report continuous-wave (CW) operation of an InAs/InGaAsP quantum-dot (QD) heterostructure laser diode (LD) with an output power of 1.1 W at room temperature. This is the first observation on the laser output over 1 W from InAs QD-LDs fabricated on InP substrates. Also, the high-power lasing emission was successfully achieved at up to 60 °C. The improvement in the lasing characteristics can be attributed to enhancement in modal gain of QD-LDs because of the increase in spatial carrier confinement around localized QD states by using a dot-in-a-well structure and a thin GaAs strain-modulating layer.

AB - We report continuous-wave (CW) operation of an InAs/InGaAsP quantum-dot (QD) heterostructure laser diode (LD) with an output power of 1.1 W at room temperature. This is the first observation on the laser output over 1 W from InAs QD-LDs fabricated on InP substrates. Also, the high-power lasing emission was successfully achieved at up to 60 °C. The improvement in the lasing characteristics can be attributed to enhancement in modal gain of QD-LDs because of the increase in spatial carrier confinement around localized QD states by using a dot-in-a-well structure and a thin GaAs strain-modulating layer.

KW - dot-in-a-well structure

KW - high-power laser diode

KW - InAs quantum dot

KW - strain-modulating layer

UR - https://www.scopus.com/pages/publications/84907972546

U2 - 10.1088/1612-2011/11/11/115815

DO - 10.1088/1612-2011/11/11/115815

M3 - Journal article

AN - SCOPUS:84907972546

SN - 1612-2011

VL - 11

JO - Laser Physics Letters

JF - Laser Physics Letters

IS - 11

M1 - 115815

ER -

High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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