Skip to main navigation Skip to search Skip to main content

High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

Research output: Contribution to journal › Journal article › peer-review

21   Link opens in a new tab Scopus citations
Original languageKorean
JournalApplied Physics Letters
StatePublished - 2017.09.26

Cite this