High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes

Hyun Gi Hong; K. Y. Ban; June O. Song; J. Cho; Y. Park; J. S. Kwak; Ian T. Ferguson; Tae Yeon Seong

doi:10.1002/pssc.200565175

High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes

Hyun Gi Hong
, K. Y. Ban
, June O. Song
, J. Cho
, Y. Park
, J. S. Kwak
, Ian T. Ferguson
, Tae Yeon Seong^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Gwangju Institute of Science and Technology
Georgia Institute of Technology
Samsung
Sunchon National University
Korea University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

High quality SnZnO (TZO)/Ag ohmic contacts to p-GaN (N_a = 4×10¹⁷/cm³) for UV flip-chip light-emitting diodes (LEDs) were investigated. The TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10^-4 Ωcm² and reflectance of 76% at 405 nm when annealed at a temperature of 530 °C for Imin in air. Near-UV LEDs made with the annealed TZO (2.5 nm)/Ag (250 nm) contacts give reverse leakage current of ∼10^-8 A at reverse voltage of -10 V. Based on X-ray photoelectron spectroscopy, possible ohmic formation mechanisms are discussed.

Original language	English
Pages (from-to)	2133-2136
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565175
State	Published - 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005.08.28 → 2005.09.2

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@article{941809ff25dc4d26a7b6e49370949496,

title = "High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes",

abstract = "High quality SnZnO (TZO)/Ag ohmic contacts to p-GaN (Na = 4×1017/cm3) for UV flip-chip light-emitting diodes (LEDs) were investigated. The TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ωcm2 and reflectance of 76\% at 405 nm when annealed at a temperature of 530 °C for Imin in air. Near-UV LEDs made with the annealed TZO (2.5 nm)/Ag (250 nm) contacts give reverse leakage current of ∼10-8 A at reverse voltage of -10 V. Based on X-ray photoelectron spectroscopy, possible ohmic formation mechanisms are discussed.",

author = "Hong, \{Hyun Gi\} and Ban, \{K. Y.\} and Song, \{June O.\} and J. Cho and Y. Park and Kwak, \{J. S.\} and Ferguson, \{Ian T.\} and Seong, \{Tae Yeon\}",

year = "2006",

doi = "10.1002/pssc.200565175",

language = "English",

volume = "3",

pages = "2133--2136",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes

AU - Hong, Hyun Gi

AU - Ban, K. Y.

AU - Song, June O.

AU - Cho, J.

AU - Park, Y.

AU - Kwak, J. S.

AU - Ferguson, Ian T.

AU - Seong, Tae Yeon

PY - 2006

Y1 - 2006

N2 - High quality SnZnO (TZO)/Ag ohmic contacts to p-GaN (Na = 4×1017/cm3) for UV flip-chip light-emitting diodes (LEDs) were investigated. The TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ωcm2 and reflectance of 76% at 405 nm when annealed at a temperature of 530 °C for Imin in air. Near-UV LEDs made with the annealed TZO (2.5 nm)/Ag (250 nm) contacts give reverse leakage current of ∼10-8 A at reverse voltage of -10 V. Based on X-ray photoelectron spectroscopy, possible ohmic formation mechanisms are discussed.

AB - High quality SnZnO (TZO)/Ag ohmic contacts to p-GaN (Na = 4×1017/cm3) for UV flip-chip light-emitting diodes (LEDs) were investigated. The TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ωcm2 and reflectance of 76% at 405 nm when annealed at a temperature of 530 °C for Imin in air. Near-UV LEDs made with the annealed TZO (2.5 nm)/Ag (250 nm) contacts give reverse leakage current of ∼10-8 A at reverse voltage of -10 V. Based on X-ray photoelectron spectroscopy, possible ohmic formation mechanisms are discussed.

UR - https://www.scopus.com/pages/publications/33746356523

U2 - 10.1002/pssc.200565175

DO - 10.1002/pssc.200565175

M3 - Conference article

AN - SCOPUS:33746356523

SN - 1862-6351

VL - 3

SP - 2133

EP - 2136

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes

Abstract

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