High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light-emitting diodes

Hyunsoo Kim; Kwang Hyeon Baik; Jaehee Cho; Jeong Wook Lee; Sukho Yoon; Hyungkun Kim; Sung Nam Lee; Cheolsoo Sone; Yongjo Park; Tae Yeon Seong

doi:10.1109/LPT.2007.891640

High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light-emitting diodes

Hyunsoo Kim^*
, Kwang Hyeon Baik
, Jaehee Cho
, Jeong Wook Lee
, Sukho Yoon
, Hyungkun Kim^*
, Sung Nam Lee
, Cheolsoo Sone
, Yongjo Park
, Tae Yeon Seong

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Samsung
Korea University

Research output: Contribution to journal › Journal article › peer-review

66 Scopus citations

Abstract

We report on the formation of high-quality AgCu alloy p-type reflectors for GaN-based light-emitting diodes (LEDs). Compared with Ag contacts, the AgCu alloy reflectors produce lower specific contact resistance (7.5 × 10^-5 Ω · cm²), higher light reflectance (89.5% at 400 nm), and better thermal stability (absence of interfacial voids), when annealed at 400 °C in N₂ :O₂) ambient. LEDs fabricated with the AgCu reflectors show light output power better than that of LEDs with the Ag reflectors. The ohmic mechanism for the AgCu alloy reflectors is explained in terms of the formation of Ag-Ga solid solution and the presence of Cu-oxide nano-particles at the contact/GaN interface.

Original language	English
Pages (from-to)	336-338
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	5
DOIs	https://doi.org/10.1109/LPT.2007.891640
State	Published - 2007.03.1

Keywords

AgCu
Alloy
GaN
Light-emitting diode (LED)
Ohmic contacts
Reflector

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10.1109/LPT.2007.891640

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@article{e32108d91ee5489daa4eebd61450e843,

title = "High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light-emitting diodes",

abstract = "We report on the formation of high-quality AgCu alloy p-type reflectors for GaN-based light-emitting diodes (LEDs). Compared with Ag contacts, the AgCu alloy reflectors produce lower specific contact resistance (7.5 × 10-5 Ω · cm2), higher light reflectance (89.5\% at 400 nm), and better thermal stability (absence of interfacial voids), when annealed at 400 °C in N2 :O2) ambient. LEDs fabricated with the AgCu reflectors show light output power better than that of LEDs with the Ag reflectors. The ohmic mechanism for the AgCu alloy reflectors is explained in terms of the formation of Ag-Ga solid solution and the presence of Cu-oxide nano-particles at the contact/GaN interface.",

keywords = "AgCu, Alloy, GaN, Light-emitting diode (LED), Ohmic contacts, Reflector",

author = "Hyunsoo Kim and Baik, \{Kwang Hyeon\} and Jaehee Cho and Lee, \{Jeong Wook\} and Sukho Yoon and Hyungkun Kim and Lee, \{Sung Nam\} and Cheolsoo Sone and Yongjo Park and Seong, \{Tae Yeon\}",

year = "2007",

month = mar,

day = "1",

doi = "10.1109/LPT.2007.891640",

language = "English",

volume = "19",

pages = "336--338",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "5",

}

TY - JOUR

T1 - High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light-emitting diodes

AU - Kim, Hyunsoo

AU - Baik, Kwang Hyeon

AU - Cho, Jaehee

AU - Lee, Jeong Wook

AU - Yoon, Sukho

AU - Kim, Hyungkun

AU - Lee, Sung Nam

AU - Sone, Cheolsoo

AU - Park, Yongjo

AU - Seong, Tae Yeon

PY - 2007/3/1

Y1 - 2007/3/1

N2 - We report on the formation of high-quality AgCu alloy p-type reflectors for GaN-based light-emitting diodes (LEDs). Compared with Ag contacts, the AgCu alloy reflectors produce lower specific contact resistance (7.5 × 10-5 Ω · cm2), higher light reflectance (89.5% at 400 nm), and better thermal stability (absence of interfacial voids), when annealed at 400 °C in N2 :O2) ambient. LEDs fabricated with the AgCu reflectors show light output power better than that of LEDs with the Ag reflectors. The ohmic mechanism for the AgCu alloy reflectors is explained in terms of the formation of Ag-Ga solid solution and the presence of Cu-oxide nano-particles at the contact/GaN interface.

AB - We report on the formation of high-quality AgCu alloy p-type reflectors for GaN-based light-emitting diodes (LEDs). Compared with Ag contacts, the AgCu alloy reflectors produce lower specific contact resistance (7.5 × 10-5 Ω · cm2), higher light reflectance (89.5% at 400 nm), and better thermal stability (absence of interfacial voids), when annealed at 400 °C in N2 :O2) ambient. LEDs fabricated with the AgCu reflectors show light output power better than that of LEDs with the Ag reflectors. The ohmic mechanism for the AgCu alloy reflectors is explained in terms of the formation of Ag-Ga solid solution and the presence of Cu-oxide nano-particles at the contact/GaN interface.

KW - AgCu

KW - Alloy

KW - GaN

KW - Light-emitting diode (LED)

KW - Ohmic contacts

KW - Reflector

UR - https://www.scopus.com/pages/publications/33947685489

U2 - 10.1109/LPT.2007.891640

DO - 10.1109/LPT.2007.891640

M3 - Journal article

AN - SCOPUS:33947685489

SN - 1041-1135

VL - 19

SP - 336

EP - 338

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 5

ER -

High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light-emitting diodes

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Keywords

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