High transconductance modulation-doped sige pMOSFETs by RPCVD

Young Joo Song; Jung Wook Lim; Jin Young Kang; Kyu Hwan Shim

doi:10.1049/el:20020970

High transconductance modulation-doped sige pMOSFETs by RPCVD

Young Joo Song^*
, Jung Wook Lim
, Jin Young Kang
, Kyu Hwan Shim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

High transconductance modulation-doped SiGe p metal-oxide-semiconductor field effect transistor (MOSFET) was fabricated by reduced pressure chemical vapor deposition (RPCVD). Compared to a Si-control pMOSFET,it showed 30% enhanced G_m up to 102 mS/mm for 0.3 gate length. This process is suitable for the mass production of high-density and high-speed complementary metal oxide semiconductor (CMOS) integrated circuits.

Original language	English
Pages (from-to)	1479-1480
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	23
DOIs	https://doi.org/10.1049/el:20020970
State	Published - 2002.11.7

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title = "High transconductance modulation-doped sige pMOSFETs by RPCVD",

abstract = "High transconductance modulation-doped SiGe p metal-oxide-semiconductor field effect transistor (MOSFET) was fabricated by reduced pressure chemical vapor deposition (RPCVD). Compared to a Si-control pMOSFET,it showed 30\% enhanced Gm up to 102 mS/mm for 0.3 gate length. This process is suitable for the mass production of high-density and high-speed complementary metal oxide semiconductor (CMOS) integrated circuits.",

author = "Song, \{Young Joo\} and Lim, \{Jung Wook\} and Kang, \{Jin Young\} and Shim, \{Kyu Hwan\}",

year = "2002",

month = nov,

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doi = "10.1049/el:20020970",

language = "English",

volume = "38",

pages = "1479--1480",

journal = "Electronics Letters",

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T1 - High transconductance modulation-doped sige pMOSFETs by RPCVD

AU - Song, Young Joo

AU - Lim, Jung Wook

AU - Kang, Jin Young

AU - Shim, Kyu Hwan

PY - 2002/11/7

Y1 - 2002/11/7

N2 - High transconductance modulation-doped SiGe p metal-oxide-semiconductor field effect transistor (MOSFET) was fabricated by reduced pressure chemical vapor deposition (RPCVD). Compared to a Si-control pMOSFET,it showed 30% enhanced Gm up to 102 mS/mm for 0.3 gate length. This process is suitable for the mass production of high-density and high-speed complementary metal oxide semiconductor (CMOS) integrated circuits.

AB - High transconductance modulation-doped SiGe p metal-oxide-semiconductor field effect transistor (MOSFET) was fabricated by reduced pressure chemical vapor deposition (RPCVD). Compared to a Si-control pMOSFET,it showed 30% enhanced Gm up to 102 mS/mm for 0.3 gate length. This process is suitable for the mass production of high-density and high-speed complementary metal oxide semiconductor (CMOS) integrated circuits.

UR - https://www.scopus.com/pages/publications/0037038596

U2 - 10.1049/el:20020970

DO - 10.1049/el:20020970

M3 - Journal article

AN - SCOPUS:0037038596

SN - 0013-5194

VL - 38

SP - 1479

EP - 1480

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -

High transconductance modulation-doped sige pMOSFETs by RPCVD

Abstract

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