High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications

Sanghun Jeon; Jeong Hee Han; Junghoon Lee; Cheol Jong Choi; Sangmoo Choi; Hyunsang Hwang; Chungwoo Kim

doi:10.1109/ESSDER.2005.1546651

High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications

Sanghun Jeon^*
, Jeong Hee Han
, Junghoon Lee
, Cheol Jong Choi
, Sangmoo Choi
, Hyunsang Hwang
, Chungwoo Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Samsung
Gwangju Institute of Science and Technology

Research output: Contribution to conference › Conference paper › peer-review

3 Scopus citations

Abstract

We report the impact of high work-function (Φ_M) metal gate and high-κ dielectrics on memory properties of NAND type charge trap flash (CTF) memory devices. In this article, theoretical and experimental studies show that high Φ_M gate and high permittivity (high-κ) dielectrics play a key role in eliminating electron back tunneling (EBT) through the blocking dielectric during the erase operation. Techniques to improve erase efficiency of CTF memory devices with a fixed metal gate by employing various chemicals and structures are introduced and those mechanisms are discussed.

Original language	English
Title of host publication	Proceedings of ESSDERC 2005
Subtitle of host publication	35th European Solid-State Device Research Conference
Pages	325-328
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDER.2005.1546651
State	Published - 2005
Event	ESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France Duration: 2005.09.12 → 2005.09.16

Publication series

Name	Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume	2005

Conference

Conference	ESSDERC 2005: 35th European Solid-State Device Research Conference
Country/Territory	France
City	Grenoble
Period	05.09.12 → 05.09.16

Access to Document

10.1109/ESSDER.2005.1546651

Cite this

Jeon, S., Han, J. H., Lee, J., Choi, C. J., Choi, S., Hwang, H., & Kim, C. (2005). High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (pp. 325-328). Article 1546651 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005). https://doi.org/10.1109/ESSDER.2005.1546651

@inproceedings{fee170a7bc92458b893de08b7e0bb4b0,

title = "High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications",

abstract = "We report the impact of high work-function (ΦM) metal gate and high-κ dielectrics on memory properties of NAND type charge trap flash (CTF) memory devices. In this article, theoretical and experimental studies show that high ΦM gate and high permittivity (high-κ) dielectrics play a key role in eliminating electron back tunneling (EBT) through the blocking dielectric during the erase operation. Techniques to improve erase efficiency of CTF memory devices with a fixed metal gate by employing various chemicals and structures are introduced and those mechanisms are discussed.",

author = "Sanghun Jeon and Han, \{Jeong Hee\} and Junghoon Lee and Choi, \{Cheol Jong\} and Sangmoo Choi and Hyunsang Hwang and Chungwoo Kim",

year = "2005",

doi = "10.1109/ESSDER.2005.1546651",

language = "English",

isbn = "0780392035",

series = "Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference",

pages = "325--328",

booktitle = "Proceedings of ESSDERC 2005",

note = "ESSDERC 2005: 35th European Solid-State Device Research Conference ; Conference date: 12-09-2005 Through 16-09-2005",

}

Jeon, S, Han, JH, Lee, J, Choi, CJ, Choi, S, Hwang, H & Kim, C 2005, High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications. in Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference., 1546651, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, vol. 2005, pp. 325-328, ESSDERC 2005: 35th European Solid-State Device Research Conference, Grenoble, France, 05.09.12. https://doi.org/10.1109/ESSDER.2005.1546651

High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications. / Jeon, Sanghun; Han, Jeong Hee; Lee, Junghoon et al.
Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 325-328 1546651 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications

AU - Jeon, Sanghun

AU - Han, Jeong Hee

AU - Lee, Junghoon

AU - Choi, Cheol Jong

AU - Choi, Sangmoo

AU - Hwang, Hyunsang

AU - Kim, Chungwoo

PY - 2005

Y1 - 2005

N2 - We report the impact of high work-function (ΦM) metal gate and high-κ dielectrics on memory properties of NAND type charge trap flash (CTF) memory devices. In this article, theoretical and experimental studies show that high ΦM gate and high permittivity (high-κ) dielectrics play a key role in eliminating electron back tunneling (EBT) through the blocking dielectric during the erase operation. Techniques to improve erase efficiency of CTF memory devices with a fixed metal gate by employing various chemicals and structures are introduced and those mechanisms are discussed.

AB - We report the impact of high work-function (ΦM) metal gate and high-κ dielectrics on memory properties of NAND type charge trap flash (CTF) memory devices. In this article, theoretical and experimental studies show that high ΦM gate and high permittivity (high-κ) dielectrics play a key role in eliminating electron back tunneling (EBT) through the blocking dielectric during the erase operation. Techniques to improve erase efficiency of CTF memory devices with a fixed metal gate by employing various chemicals and structures are introduced and those mechanisms are discussed.

UR - https://www.scopus.com/pages/publications/33751440576

U2 - 10.1109/ESSDER.2005.1546651

DO - 10.1109/ESSDER.2005.1546651

M3 - Conference paper

AN - SCOPUS:33751440576

SN - 0780392035

SN - 9780780392038

T3 - Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

SP - 325

EP - 328

BT - Proceedings of ESSDERC 2005

T2 - ESSDERC 2005: 35th European Solid-State Device Research Conference

Y2 - 12 September 2005 through 16 September 2005

ER -

Jeon S, Han JH, Lee J, Choi CJ, Choi S, Hwang H et al. High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 325-328. 1546651. (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference). doi: 10.1109/ESSDER.2005.1546651

High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications

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